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MMBTA92 даташит

Функция этой детали – «PNP High Voltage Amplifier».



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Номер в каталоге Производители Описание PDF
MMBTA92 Zowie Technology Corporation
Zowie Technology Corporation
  HIGH VOLTAGE TRANSISTOR PNP SILICON

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MMBTA92 WEITRON
WEITRON
  High-Voltage PNP Transistor

MMBTA92 High-Voltage PNP Transistor Surface Mount P b Lead(Pb)-Free Maximum Ratings Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current-Continuous COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCB O VE B O IC 3 1 2 SOT-23 Value -3 0 0 -3 0 0 -5 .0 -5 0 0 Unit Vdc Vdc Vdc m Adc Thermal Characteristics Characteristics Total Device Dis s ipation FR -5 B oard (1) TA=25 C Derate above 2 5 C Thermal Res is tance, Junction to Ambient Total Device Dis s ipation Alumina S ubs t
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MMBTA92 Unisonic Technologies
Unisonic Technologies
  HIGH VOLTAGE PNP TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD MMBTA92 HIGH VOLTAGE PNP TRANSISTOR DESCRIPTION The UTC MMBTA92 are high voltage PNP transistors, designed for telephone signal switching and for high voltage amplifier. PNP SILICON TRANSISTOR 3 1 FEATURES * High Collector-Emitter voltage: VCEO=-300V * Collector Dissipation: PC(MAX)=350mW 2 SOT-23 *Pb-free plating product number: MMBTA92L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBTA92-AE3-R MMBTA92L-AE3-R Package SOT-23 Pin Assignment 1 2 3 E
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MMBTA92 TRSYS
TRSYS
  PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

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MMBTA92 TAITRON
TAITRON
  SMD High Voltage Transistor

SMD High Voltage Transistor (PNP) Features • This device is designed for high voltage driver applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD High Voltage Transistor (PNP) MMBTA92 SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBTA92 Marking Code 2D -VCBO Collector-Base Voltage 300 -VCEO Collector-Emitter Voltage 300 -VEBO Emitter-Base Voltage 5 -IC Collector Cu
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MMBTA92 STMicroelectronics
STMicroelectronics
  SMALL SIGNAL PNP TRANSISTOR

® MMBTA92 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type MMBTA92 s Marking A92 s s s SILICON EPITAXIAL PLANAR PNP HIGH VOLTAGE TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBTA42 SOT-23 APPLICATIONS VIDEO AMPLIFIER CIRCUITS (RGB CATHODE CURRENT CONTROL) s TELEPHONE WIRELINE INTERFACE (HOOK SWITCHES, DIALER CIRCUITS) s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter
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MMBTA92 SEMTECH
SEMTECH
  PNP Silicon High Voltage Transistors

MMBTA92 / MMBTA93 PNP Silicon High Voltage Transistors for high voltage switching and amplifier applications. As complementary types the NPN transistors MMBTA42 and MMBTA43 are recommended. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage MMBTA92 MMBTA93 MMBTA92 MMBTA93 Collector Current Total Device Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS SOT-23 Plastic Package Value 300 200 300 200
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MMBTA92 SeCoS
SeCoS
  General Purpose Transistor

Elektronische Bauelemente MMBTA92 PNP Silicon General Purpose Transistor FEATURES Pb-free is available. Power dissipation & Collector current Pcm: 0.3W Icm: -0.3A High voltage V(BR): -300V COLLECTOR 3 RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A L 3 Top View 12 BS 1 BASE 2 EMITTER 3 1 2 V D G C H K SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 J All Dimens
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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