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MMBTA55 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
19 MMBTA55   AMPLIFIER TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD MMBTA55 Preliminary AMPLIFIER TRANSISTOR PNP MMBTA55  FEATURES * Collector-Emitter Voltage: VCEO=60V  ORDERING INFORMATION Ordering Number MMBTA55G-AE3-R MMBTA55G-AL3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 SOT-323 C: Collector Pin Assignment 123 EBC EBC Packing Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., LTD 1 of 3 QW-R206-104.c MMBTA55 Preliminary AMPLIFIER TRANSISTOR  ABSOLUTE MAXIMUM RA
UTC
UTC
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18 MMBTA55   PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

TRSYS
TRSYS
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17 MMBTA55   SMD General Purpose Transistor

SMD General Purpose Transistor (PNP) MMBTA55/MMBTA56 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBTA55 MMBTA56 VCEO VCBO VEBO IC Marking Code Collector-Emitter Voltage Collector-Base Voltage Emitter-Base V
TAITRON
TAITRON
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16 MMBTA55   PNP Silicon Driver Transistor

Elektronische Bauelemente MMBTA55 / MMBTA56 PNP Silicon Driver Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 3 1 2 C OLLE C TOR 3 1 BAS E 2 E MITTE R A L 3 Top View 12 BS VG C D HK SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 J S 2.100 2.500 V 0.450 0.600 All Dimension in mm ƔMAXIMUM RATINGS RATING Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Vol
SeCoS
SeCoS
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15 MMBTA55   PNP (DRIVER TRANSISTOR)

Samsung
Samsung
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14 MMBTA55   DRIVER TRANSISTOR

MMBTA55,56 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) DRIVER TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO VEBO "C MMBTA55 MMBTA56 60 80 60 80 4.0 500 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic "Total Device Dissipation, Ta = 25°C Derate above 25°C Symbol PD Storage Temperature Tstq "Thermal Resistance Junction to Ambient R&JA •Package mounted on 99.5% alumina 10 x 8
Motorola
Motorola
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13 MMBTA55   PNP General Purpose Amplifier

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA55 THRU MMBTA56 Features • This device is designed for general purpose amplifier applications at collector current to 300mA • Marking : MMBTA55=2H/B55, MMBTA56=2GM/B56 • Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 Maximum Ratings Symbol Rating VCEO Collector-Emitter Voltage MMBTA55 MMBTA56 VCBO Collector-Ba
MCC
MCC
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12 MMBTA55   PNP GENERAL PURPOSE TRANSISTOR

PNP GENERAL PURPOSE TRANSISTOR MMBTA55 thru MMBTA56 REVERSE VOLTAGE – 60 to 80 Volts FORWARD CURRENT – 0.5 Amperes FEATURES • Surface mount device • Simplifies circuit design • Reduces board space • Reduces component count SOT-23 MECHANICAL DATA • Case: SOT-23 plastic • Lead Free in RoHS 2002/95/EC Compliant • Case material: “Green” molding compound, UL flammability classification 94V-0, (No Br. Sb. CI) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless
LITE-ON
LITE-ON
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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
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HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
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На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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