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MMBTA13 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
22 MMBTA13   NPN Transistors Darlington Amplifier

MMBTA13 MMBTA14 NPN Transistors Darlington Amplifier COLLECTOR 3 BASE 1 MAXIMUM R ATING S R ating C ollector- E mitter Voltage C ollector- B as e Voltage E mitter- B as e Voltage C ollector C urrent - C ontinuous THE R MAL C HAR AC TE R IS TIC S C harac teris tic Total Device Dis s ipation F R ±5 B oard(1) TA = 25 C Derate above 25 C T hermal R es is tance J unction to Ambient Total Device Dis s ipation Alumina S ubs trate,(2) TA = 25 C Derate above 25 C T hermal R es is tance J unction to Ambient J unction and S to
WEITRON
WEITRON
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21 MMBTA13   DARLINGTON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD MMBTA13 Preliminary NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MMBTA13 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = 30V * Collector Dissipation: PC(MAS) = 350 mW 3 1 2 SOT-23 (JEDEC TO-236)  ORDERING INFORMATION Ordering Number MMBTA13G-AE3-R Note: Pin Assignment: E: Emitter B: Base Package SOT-23 C: Collector Pin Assignment 123 EBC Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Uniso
UTC
UTC
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20 MMBTA13   NPN SURFACE MOUNT DARLINGTON TRANSISTOR

TRSYS
TRSYS
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19 MMBTA13   NPN Silicon Epitaxial Planar Darlington Transistor

MMBTA13 NPN Silicon Epitaxial Planar Darlington Transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Total Device Dissipation Derate above 25 OC Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range Symbol VCES VCBO VEBO IC Ptot RθJA Tj TS Value 30 30 10 500 200 2.8 357 150 -55 to +150 Unit V V V mA mW mW/ OC OC/W OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech Intern
SEMTECH
SEMTECH
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18 MMBTA13   Darlington Amplifier Transistor NPN Silicon

Elektronische Bauelemente MMBTA13 MMBTA14 Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free 3 1 2 COLLECTOR 3 BASE 1 EMITTER 2 A L 3 BS 12 VG FEATURES C Power dissipation D PCM : 0.3W Tamb=25 Collector current ICM : 0.3A Collector-base voltage V(BR)CBO : 30V Operating and storage junction temperature range TJ Tstg: -55 to +150 H K SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085
SeCoS
SeCoS
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17 MMBTA13   NPN (DARLINGTON AMPLIFIER TRANSISTOR)

Samsung
Samsung
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16 MMBTA13   SOT-23 BIPOLAR TRANSISTORS

MMBTA13 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM 0.3 W(Tamb=25OC) * Collector current ICM 0.3 A * Collector-base voltage V(BR)CBO: 30 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specifie
RECTRON
RECTRON
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15 MMBTA13   DARLINGTON AMPLIFIER TRANSISTOR

MAXIMUM RATINGS Rating Collector-Emitter VoKage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCES VCBO VEBO ic THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, T/ = 25°C Derate above 25°C PD Storage Temperature Tstg •Thermal Resistance Junction to Ambient R&JA •Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. Vakie 30 30 10 300 Max 350 2.8 150 357 Unit Vdc Vdc Vdc mAdc Unit mW mW/°C °C °C/W MMBTA13,14 CASE 318-02/03, STYLE 6 SOT-23 (
Motorola
Motorola
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Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
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HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
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На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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