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MMBT5551 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
23 MMBT5551   HIGH VOLTAGE TRANSISTOR NPN SILICON

Zowie Technology Corporation
Zowie Technology Corporation
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22 MMBT5551   High Voltage NPN Transistors

High Voltage NPN Transistors MMBT5550 MMBT5551 COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-23 V CEO Value 140 160 6.0 600 556 300 2.4 417 MMBT5550 = M1F ; MMBT5551 = G1 (TA=25 C unless otherwise noted) 1.0 , -100 , 10 , (3) MMBT5550 MMBT5551 MMBT5550 MMBT5551 WEITRON http://www.weitron.com.tw 140 160 160 180 6.0 MMBT5550 MMBT5551 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min OFF CHARACTERISTICS Collector Cutoff Current ( VCB ( VCB ( VCB ( VCB 100 Vdc,I
WEITRON
WEITRON
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21 MMBT5551   HIGH VOLTAGE SWITCHING TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V * High current gain 3 1 2 SOT-23 *Pb-free plating product number:MMBT5551L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBT5551L-x-AE3-6-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Rank (5)Lead Plating (1) R: Tape
UTC
UTC
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20 MMBT5551   NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

TRSYS
TRSYS
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19 MMBT5551   SMD High Voltage Transistor

SMD High Voltage Transistor (NPN) MMBT5550/MMBT5551 SMD High Voltage Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data SOT-23 Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT5550 MMBT5551 VCEO VCBO VEBO IC Marking Code Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Vol
TAITRON
TAITRON
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18 MMBT5551   NPN Silicon Epitaxial Planar Transistors

MMBT5551 NPN Silicon Epitaxial Planar Transistors for high voltage amplifier applications. Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Tamb=25 OC Parameter DC Current Gain at VCE=5V, IC=1mA at VCE=5V, IC=10mA at VCE=5V, IC=50mA Collector Emitter Breakdown Voltage at IC=1mA Collector Base Breakdown Voltage at IC=100µA Emitter Base Breakdown Volta
SEMTECH
SEMTECH
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17 MMBT5551   NPN HIGH VOLTAGE TRANSISTOR

MMBT5551 NPN HIGH VOLTAGE TRANSISTOR VOLTAGE 160 Volts POWER 250 mWatts FEATURES • NPN Silicon, planar design • Collector-emitter voltage VCE = 160V • Collector current IC = 300mA • Lead free in comply with EU RoHS 2002/95/EC directives. • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA • Case: SOT-23, Plastic • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.0003 ounces, 0.0084 grams • Marking: M51 C 0.120(3.04) 0 . 11 0 ( 2 . 8 0 ) 0.056(1.40) 0.0
Pan Jit International
Pan Jit International
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16 MMBT5551   NPN Plastic Encapsulate Transistor

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT5551 Features • Collector Current: ICM=0.6A • Collector-Base Voltage: V(BR)CBO=180V • Operating And Storage Temperatures –55OC to 150OC • Capable of 0.3Watts of Power Dissipation • Marking: G1 • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Se
MCC
MCC
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Номер в каталоге Описание Производители PDF
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Fairchild Semiconductor
Fairchild Semiconductor
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HYDIS
HYDIS
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На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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