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MMBT5550L даташит

Функция этой детали – «High Voltage Transistors».



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Номер в каталоге Производители Описание PDF
MMBT5550L ON Semiconductor
ON Semiconductor
  High Voltage Transistors

MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − Emitter Voltage MMBT5550 MMBT5551, SMMBT5551 MMBT5550 MMBT5551, SMMBT5551 Symbol VCEO Value 140 160 160 180 6.0 600 > 8000 > 400 Unit
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MMBT5550LT1 ON
ON
  High Voltage Transistors(NPN Silicon)

MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 Symbol VCEO VCBO VEBO IC 5550 140 160 6.0 600 5551 160 180 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are indi
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MMBT5550LT1 Motorola Semiconductors
Motorola Semiconductors
  High Voltage Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT5550LT1/D High Voltage Transistors NPN Silicon 1 BASE COLLECTOR 3 MMBT5550LT1 MMBT5551LT1* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 140 160 6.0 600 2 EMITTER Unit Vdc Vdc Vdc mAdc 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipa
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MMBT5550LT1 Leshan Radio Company
Leshan Radio Company
  High Voltage Transistors(NPN Silicon)

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MMBT5550LT1G ON Semiconductor
ON Semiconductor
  High Voltage Transistors

MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector − Emitter Voltage MMBT5550 MMBT5551, SMMBT5551 MMBT5550 MMBT5551, SMMBT5551 Symbol VCEO Value 140 160 160 180 6.0 600 > 8000 > 400 Unit
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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