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MMBT5550L даташитФункция этой детали – «High Voltage Transistors». |
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Номер в каталоге | Производители | Описание | |
MMBT5550L | ON Semiconductor |
High Voltage Transistors MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 1 BASE 2 EMITTER
• AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique •
Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Collector − Emitter Voltage MMBT5550 MMBT5551, SMMBT5551 MMBT5550 MMBT5551, SMMBT5551 Symbol VCEO Value 140 160 160 180 6.0 600 > 8000 > 400 Unit |
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MMBT5550LT1 | ON |
High Voltage Transistors(NPN Silicon) MMBT5550LT1, MMBT5551LT1
MMBT5551LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 Symbol VCEO VCBO VEBO IC 5550 140 160 6.0 600 5551 160 180 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are indi |
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MMBT5550LT1 | Motorola Semiconductors |
High Voltage Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT5550LT1/D
High Voltage Transistors
NPN Silicon
1 BASE
COLLECTOR 3
MMBT5550LT1 MMBT5551LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 140 160 6.0 600
2 EMITTER Unit Vdc Vdc Vdc mAdc
1 2
3
CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipa |
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MMBT5550LT1 | Leshan Radio Company |
High Voltage Transistors(NPN Silicon) |
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MMBT5550LT1G | ON Semiconductor |
High Voltage Transistors MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 1 BASE 2 EMITTER
• AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique •
Site and Control Change Requirements These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Collector − Emitter Voltage MMBT5550 MMBT5551, SMMBT5551 MMBT5550 MMBT5551, SMMBT5551 Symbol VCEO Value 140 160 160 180 6.0 600 > 8000 > 400 Unit |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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