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Datasheet MJ1001 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 21 | MJ1001 | Medium-Power Complementary Silicon Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ1000/D
Medium-Power Complementary Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc • Monolithic Construction wi |
 Motorola Inc |
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| 20 | MJ1001 | (MJ1000 / MJ1001) SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
MJ1000/1001
DESCRIPTION ·With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier appli |
 SavantIC |
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| 19 | MJ1001 | (MJ1000 / MJ1001) Complementary Power Darlingtons NPN MJ1000 – MJ1001 COMPLEMENTARY POWER DARLINGTONS
The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications. Their complementary PNP types are the |
 Comset Semiconductors |
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| 18 | MJ10011 | Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-3 Sleeve |
 New Jersey Semiconductor |
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