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MG5436 даташит ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 MG5436   X-Band Magnetron

E2V Technologies MG5436 X-Band Magnetron The data should be read in conjunction with the Magnetron Preamble. DESCRIPTION Compact, rugged, lightweight, fixed frequency pulse magnetron, designed for marine radar applications. GENERAL DATA Electrical Operating frequency . . . . . 9410 + 30 MHz Typical peak output power . . . . . . 25 kW Cathode . . . . . . . . . . . . indirectly heated Heater voltage (see note 1) . . . . . . . 6.3 V Heater current at 6.3 V (see note 2) . . . . 0.5 A Cathode pre-heating time (
E2V Technologies
E2V Technologies
MG5436 pdf Даташит



MG даташита ( переписка )

Номер в каталоге Описание Производители PDF
MGA-86576-TR1

1.5 - 8 GHz Low Noise GaAs MMIC Amplifier

Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)
pdf
MGR1602

(MGR1601 - MGR1607) Glass Passivated Silicon Rectifiers

MCC
MCC
pdf
MG12864-09

LCD Module

BONA
BONA
pdf
MG65M513

8-Bit Micro-Controller

Megawin
Megawin
pdf
MGB51CB-1

ULTRA HIGH BRIGHTNESS GREEN LED LAMP

Micro
Micro
pdf
MGV075-11

GaAs Hyperabrupt Varactor Diodes

Aeroflex
Aeroflex
pdf
MG82FE308

8051-Based MCU

Megawin
Megawin
pdf
MGBR15L45

MOS GATED BARRIER RECTIFIER

UTC
UTC
pdf
MGFC42V7785A

7.7- 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET

Mitsubishi
Mitsubishi
pdf
MG25Q6ES51A

N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)

Toshiba
Toshiba
pdf


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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
GUVA-S12SD

This electronic part is an UV-B Sensor.

ROITHNER
ROITHNER
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
pdf
KTD1145

This electronic part is an EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC
pdf

На первой странице data sheets приводятся:
свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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