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даташит ME4856-G IC Даташиты PDF |
| Номер в каталоге | Описание | Производители | ||
| 1 | ME4856-G | N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outlin |
 Matsuki |
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ME48 даташита ( переписка ) |
| Номер в каталоге | Описание | Производители | |
| ME4812-G | N-Channel 30-V(D-S) MOSFET ME4812/ME4812-G
N-Channel 30-V(D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology integrated Schottky diode. This high density process is |
Matsuki |
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| ME4812B-G | N-Channel 30-V(D-S) MOSFET ME4812B/ME4812B-G
N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode
GENERAL DESCRIPTION
The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially t |
Matsuki |
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| ME4839W | WHITE SIDE BACKLIGHT
MICRO
ELECTRO NICS
ME4839W
WHITE SIDE BACKLIGHT FOR LCD DISPLAY
ABSOLUTE MAXIMUM RATINGS Power Dissipation Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range
Pd
IF VR Topr Tstg
70mW
30mA 5V -20 to +70°C -25 t |
 Micro Electronics |
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| ME4812B | N-Channel 30-V(D-S) MOSFET ME4812B/ME4812B-G
N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode
GENERAL DESCRIPTION
The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially t |
Matsuki |
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| ME4812 | N-Channel 30-V(D-S) MOSFET ME4812/ME4812-G
N-Channel 30-V(D-S) MOSFET, ESD Protection
GENERAL DESCRIPTION
The ME4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology integrated Schottky diode. This high density process is |
Matsuki |
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| ME4856 | N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET
GENERAL DESCRIPTION
The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These |
Matsuki |
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Ссылка Поделиться :
[1]
Последние обновления
| Номер в каталоге | Описание | Производители | |
| CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. |
 Fairchild Semiconductor |
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| HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. |
 HYDIS |
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На первой странице data sheets приводятся: |
| DataSheet26.com | 2020 | Контакты |