Datasheet ME4856-G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ME4856-G	N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particul	Matsuki

ME485 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ME4856-G	N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These	Matsuki
ME4856	N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These	Matsuki

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Número de pieza	Descripción	Fabricantes	PDF
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