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даташит ME4856-G IC Даташиты PDF

Номер в каталоге Описание Производители PDF
1 ME4856-G   N-Channel 30-V(D-S) MOSFET

N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outlin
Matsuki
Matsuki
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ME48 даташита ( переписка )

Номер в каталоге Описание Производители PDF
ME4812-G

N-Channel 30-V(D-S) MOSFET

ME4812/ME4812-G N-Channel 30-V(D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology integrated Schottky diode. This high density process is
Matsuki
Matsuki
pdf
ME4812B-G

N-Channel 30-V(D-S) MOSFET

ME4812B/ME4812B-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially t
Matsuki
Matsuki
pdf
ME4839W

WHITE SIDE BACKLIGHT

MICRO ELECTRO NICS ME4839W WHITE SIDE BACKLIGHT FOR LCD DISPLAY ABSOLUTE MAXIMUM RATINGS Power Dissipation Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Pd IF VR Topr Tstg 70mW 30mA 5V -20 to +70°C -25 t
Micro Electronics
Micro Electronics
pdf
ME4812B

N-Channel 30-V(D-S) MOSFET

ME4812B/ME4812B-G N-Channel 30-V (D-S) MOSFET Integrated Schottky Diode GENERAL DESCRIPTION The ME4812B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially t
Matsuki
Matsuki
pdf
ME4812

N-Channel 30-V(D-S) MOSFET

ME4812/ME4812-G N-Channel 30-V(D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology integrated Schottky diode. This high density process is
Matsuki
Matsuki
pdf
ME4856

N-Channel 30-V(D-S) MOSFET

N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These
Matsuki
Matsuki
pdf



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Последние обновления

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CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.

HYDIS
HYDIS
pdf

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