Datasheet ME4839W Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	ME4839W	WHITE SIDE BACKLIGHT MICRO ELECTRO NICS ME4839W WHITE SIDE BACKLIGHT FOR LCD DISPLAY ABSOLUTE MAXIMUM RATINGS Power Dissipation Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Pd IF VR Topr Tstg 70mW 30mA 5V -20 to +70°C -25 to +75°C ELECTRO-OP	Micro Electronics

ME48 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
ME4856-G	N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These	Matsuki
ME4856	N-Channel 30-V(D-S) MOSFET N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION The ME4856 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These	Matsuki
ME4812	N-Channel 30-V(D-S) MOSFET ME4812/ME4812-G N-Channel 30-V(D-S) MOSFET, ESD Protection GENERAL DESCRIPTION The ME4812 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology integrated Schottky diode. This high density process is	Matsuki

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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