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MDS3754A даташитФункция этой детали – «P-channel Trench Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MDS3754A | MagnaChip |
P-channel Trench MOSFET MDS3754A – P-Channel Trench MOSFET
MDS3754A
P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ
General Description
The MDS3754A uses advanced Magnachip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability. Low RDS(ON), Low Gate Charge can be offering superior benefit in the application.
5(D) 6(D) 7(D) 8(D)
Features
VDS = -40V ID = -6.0 @ VGS = -10V RDS(ON)
<45m @ VGS = -10V <60m @ VGS = -4.5V
Applications
Inverters General purpose |
Это результат поиска, начинающийся с "3754A", "MDS37" |
Номер в каталоге | Производители | Описание | |
MK3754A | Integrated Circuit Systems |
Low Cost 54 MHz 3.3 Volt VCXO I C R O C LOC K
Description
The MK3754 is ICS/Microclock’s lowest cost, low jitter, high performance 3.3 Volt VCXO and PLL clock synthesizer designed to replace expensive 54 MHz VCXOs. The on-chip Voltage Controlled Crystal Oscillator accepts a 0 to 3.3 V input voltage to vary |
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MK3754ATR | Integrated Circuit Systems |
Low Cost 54 MHz 3.3 Volt VCXO I C R O C LOC K
Description
The MK3754 is ICS/Microclock’s lowest cost, low jitter, high performance 3.3 Volt VCXO and PLL clock synthesizer designed to replace expensive 54 MHz VCXOs. The on-chip Voltage Controlled Crystal Oscillator accepts a 0 to 3.3 V input voltage to vary |
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2SC3754 | Inchange Semiconductor |
Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·Wide Area of Safe Operation ·High Breakdown Voltage-
: V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode
APPLICATIONS ·Designed for regulator applications.
ABSOLUTE MAX |
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2SK3754 | Toshiba Semiconductor |
Silicon N Channel MOS Type Relay Drive
2SK3754
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
2SK3754
Relay Drive, DC−DC Converter and Motor Drive Applications
• • • • • 4.5-V gate drive Low drain-source ON resistance: RDS (ON) = 71 mΩ (typ.) High forward tran |
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B37541Jxxxx | EPCOS |
Multilayer Ceramic Capacitors
Multilayer Ceramic Capacitors X8R
Ordering code system
Chip
B37541
K
5
102
K
0
60
Packaging 60 62 70 72
^ ^ ^ ^
cardboard tape, 180-mm reel blister tape, 180-mm reel cardboard tape, 330-mm reel blister tape, 330-mm reel
Internal coding
Capacitance |
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B37541Kxxxx | EPCOS |
Multilayer Ceramic Capacitors
Multilayer Ceramic Capacitors X8R
Ordering code system
Chip
B37541
K
5
102
K
0
60
Packaging 60 62 70 72
^ ^ ^ ^
cardboard tape, 180-mm reel blister tape, 180-mm reel cardboard tape, 330-mm reel blister tape, 330-mm reel
Internal coding
Capacitance |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |