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MDS3651 даташитФункция этой детали – «Single P-channel Trench Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MDS3651 | MagnaChip |
Single P-Channel Trench MOSFET MDS3651– Single P-Channel Trench MOSFET, -30V, -5.3A, 35mΩ
MDS3651
Single P-Channel Trench MOSFET, -30V, -6.0A, 35mΩ
General Description
The MDS3651 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability
Features
VDS = -30V ID = -6.0A @ VGS = -10V RDS(ON)
<35m @ VGS = -10V <55m @ VGS = -4.5V
Applications
Inverters General purpose applications
5(D) 6(D) 7(D) 8(D)
D
4(G)
3(S) 2(S) 1(S)
G
Absolute Maximum R |
Это результат поиска, начинающийся с "3651", "MDS3" |
Номер в каталоге | Производители | Описание | |
2N3651 | New Jersey Semiconductor |
Thyristor SCR 200V 200A 3-Pin(2+Tab) TO-3 Sleeve |
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2SC3651 | Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor Ordering number:EN1779A
NPN Epitaxial Planar Silicon Transistor
2SC3651
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· LF amplifiers, various drivers, muting circuit.
Features
· High DC current gain (hFE=500 to 2000). · High breakdown voltage ( |
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2SC3651 | Kexin |
Transistor SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistors 2SC3651
Features
High DC current gain High breakdown voltage Low colleotor-to- emitter saturation voltage High VEBO (VEBO 15V)
Very small size making it easy to provide high-density small-sized hybrid IC's.
Absolut |
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2SK3651-01R | Fuji Electric |
N-CHANNEL SILICON POWER MOSFET
2SK3651-01R
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
Applications
Switching regulators UPS (Uninterrupt |
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AK536512W | ACCUTEK |
524288 Word by 32 Bit CMOS Dynamic Random Access Memory MICROCIRCUIT CORPORATION
DESCRIPTION
The Accutek AK536512W high density memory module is a CMOS dynamic RAM organized in 512K x 36 bit words. The module consists of sixteen standard 256K x 4 DRAMs in plastic SOJ packages and eight 256K x 1 DRAMs in PLCC packages. The assembly has |
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C3651 | Sanyo |
NPN Transistor - 2SC3651 Ordering number:EN1779A
NPN Epitaxial Planar Silicon Transistor
2SC3651
High hFE, Low-Frequency General-Purpose Amplifier Applications
Applications
· LF amplifiers, various drivers, muting circuit.
Features
· High DC current gain (hFE=500 to 2000). · High breakdown voltage ( |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |