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MDS1527 даташит

Функция этой детали – «N-channel Trench Mosfet».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
MDS1527 MagnaChip
MagnaChip
  N-Channel Trench MOSFET

MDS1527 – Single N-Channel Trench MOSFET 30V MDS1527 Single N-channel Trench MOSFET 30V, 13.1A, 15.9mΩ General Description The MDS1527 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1527 is suitable for DC/DC converter and general purpose applications. Features VDS = 30V ID = 13.1A @VGS = 10V RDS(ON) < 15.9mΩ @VGS = 10V < 23.7mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested 5(D) 6(D) 7(D) 8(D) 4(G) 3(S)
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Это результат поиска, начинающийся с "1527", "MDS1"

Номер в каталоге Производители Описание PDF
2512061527Y0 Fair Rite
Fair Rite

Chip Beads

42 14th Edition SM Beads Dimensions (Bold numbers are in millimeters, light numbers are nominal in inches.) Tape Width mm Pitch mm Part Number* Fig. A 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.70±0.2 .106 2.70±0.2 .106 1.5
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2SA1527 Sanyo Semicon Device
Sanyo Semicon Device

PNP/NPN Epitaxial Planar Silicon Transistors

Ordering number:EN2151B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1527/2SC3921 Switching Applications (with Bias Resistance) Applications · Switching circuits, inverter circuits, interface circuits, driver circuits. Features · On-chip bias resistance : R1=4.7kΩ, R2=4.
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2SB1527 Sanyo Semicon Device
Sanyo Semicon Device

PNP Epitaxial Planar Silicon Transistors

Ordering number:EN4667 PNP Epitaxial Planar Silicon Transistors 2SB1527 Compact Motor Driver Applications Features · Low saturation voltage. · Contains a diode between collector and emitter. · Contains a bias resistor between base and emitter. · Large current capacity. · C
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2SB1527 Kexin
Kexin

PNP Epitaxial Planar Silicon Transistors

SMD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SB1527 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Low saturation voltage. Contains a diode between collector and emitter. Contains a bias resistor between base and emitter. Large current ca
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2SD1527 Hitachi Semiconductor
Hitachi Semiconductor

Silicon NPN Triple Diffused

2SD1527 Silicon NPN Triple Diffused Application High voltage power amplifier Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector c
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2SD1527 Renesas
Renesas

Silicon NPN Triple Diffused

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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