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MDS1527 даташитФункция этой детали – «N-channel Trench Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MDS1527 | MagnaChip |
N-Channel Trench MOSFET MDS1527 – Single N-Channel Trench MOSFET 30V
MDS1527
Single N-channel Trench MOSFET 30V, 13.1A, 15.9mΩ
General Description
The MDS1527 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDS1527 is suitable for DC/DC converter and general purpose applications.
Features
VDS = 30V ID = 13.1A @VGS = 10V RDS(ON) < 15.9mΩ @VGS = 10V < 23.7mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested
5(D) 6(D) 7(D) 8(D)
4(G)
3(S) |
Это результат поиска, начинающийся с "1527", "MDS1" |
Номер в каталоге | Производители | Описание | |
2512061527Y0 | Fair Rite |
Chip Beads 42
14th Edition
SM Beads
Dimensions (Bold numbers are in millimeters, light numbers are nominal in inches.)
Tape Width mm Pitch mm
Part Number*
Fig.
A 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.70±0.2 .106 2.70±0.2 .106 1.5 |
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2SA1527 | Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN2151B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1527/2SC3921
Switching Applications (with Bias Resistance)
Applications
· Switching circuits, inverter circuits, interface circuits, driver circuits.
Features
· On-chip bias resistance : R1=4.7kΩ, R2=4. |
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2SB1527 | Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistors Ordering number:EN4667
PNP Epitaxial Planar Silicon Transistors
2SB1527
Compact Motor Driver Applications
Features
· Low saturation voltage. · Contains a diode between collector and emitter. · Contains a bias resistor between base and emitter. · Large current capacity. · C |
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2SB1527 | Kexin |
PNP Epitaxial Planar Silicon Transistors SMD Type
Transistors IC
PNP Epitaxial Planar Silicon Transistors 2SB1527
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
Features
+0.1 2.4-0.1
Low saturation voltage. Contains a diode between collector and emitter. Contains a bias resistor between base and emitter. Large current ca |
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2SD1527 | Hitachi Semiconductor |
Silicon NPN Triple Diffused 2SD1527
Silicon NPN Triple Diffused
Application
High voltage power amplifier
Outline
TO-220AB
1
2 3
1. Base 2. Collector (Flange) 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector c |
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2SD1527 | Renesas |
Silicon NPN Triple Diffused To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003 |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |