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MDD5N40 даташит ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 MDD5N40   N-Channel MOSFET

MDI5N40 N-channel MOSFET 400V MDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω General Description The MDI5N40 / MDD5N40 use advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N40 is suitable device for SMPS, HID and general purpose applications. Features VDS = 400V ID = 3.4A RDS(ON) ≤ 1.6Ω Applications Power Supply PFC Ballast @VGS = 10V @VGS = 10V D I-PAK G D S (TO-251) G S Absolute Maximum Ratings (Ta = 25oC) Charact
MagnaChip
MagnaChip
MDD5N40 pdf Даташит



MDD даташита ( переписка )

Номер в каталоге Описание Производители PDF
MDD1901

Single N-channel Trench MOSFET

MagnaChip
MagnaChip
pdf
MDD26-16N1B

HIgh Power Diode Modules

IXYS Corporation
IXYS Corporation
pdf
MDD142-18N1

HIgh Power Diode Modules

IXYS Corporation
IXYS Corporation
pdf
MDD220-18N1

HIgh Power Diode Modules

IXYS Corporation
IXYS Corporation
pdf
MDD1754

N-channel Trench MOSFET

MagnaChip
MagnaChip
pdf
MDD44-18N1B

HIgh Power Diode Modules

IXYS Corporation
IXYS Corporation
pdf
MDD26-12N1B

HIgh Power Diode Modules

IXYS Corporation
IXYS Corporation
pdf
MDD142-14N1

HIgh Power Diode Modules

IXYS Corporation
IXYS Corporation
pdf
MDD312-14N1

High Power Diode Modules

IXYS
IXYS
pdf
MDD220-14N1

HIgh Power Diode Modules

IXYS Corporation
IXYS Corporation
pdf


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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
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GUVA-S12SD

This electronic part is an UV-B Sensor.

ROITHNER
ROITHNER
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HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
pdf
KTD1145

This electronic part is an EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC
pdf

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свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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