|
|
|
даташит MDD1752 IC Даташиты PDF |
| Номер в каталоге | Описание | Производители | ||
| 1 | MDD1752 | N-Channel Trench MOSFET MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
MDD1752
N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
General Description
The MDD1752 uses advanced MagnaChip’s trench MOSFET Technology to provide high performance in onstate resistance, switching performance and reliability Low RDS(ON), low gate charge can be offering superior benefit in the application.
Features
VDS = 40V ID = 50A @VGS = 10V RDS(ON) < 8.0mΩ @ VGS = 10V < 10.5mΩ @ VGS = 4.5V
Applications
Inverters General purpose applications
D
G
http://www. |
 MagnaChip Semiconductor |
 |
MDD даташита ( переписка ) |
| Номер в каталоге | Описание | Производители | |
| MDD255-14N1 | HIgh Power Diode Modules
MDD 255
High Power Diode Modules
IFRMS = 2x 450 A IFAVM = 2x 270 A VRRM = 1200-2200 V
V RSM
VDSM
V
1300 1500 1700 1900 2100 2300
V RRM
VDRM
V
1200 1400 1600 1800 2000 2200
Type
MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 |
 IXYS Corporation |
 |
| MDD95-12N1B | HIgh Power Diode Modules
Diode Modules
VRSM
V
900 1300 1500 1700 1900 2100 2300
VRRM
V
800 1200 1400 1600 1800 2000 2200
Type
MDD 95-08N1 B MDD 95-12N1 B MDD 95-14N1 B MDD 95-16N1 B MDD 95-18N1 B MDD 95-20N1 B MDD 95-22N1 B
MDD 95
IFRMS = 2x 180 A IFAVM = 2x 120 A VRRM = 800-2200 |
IXYS Corporation |
|
| MDD3N50 | N-Channel MOSFET MDD3N50 N-channel MOSFET 500V
Preliminary – Subject to change without notice
MDD3N50
N-Channel MOSFET 500V, 2.8 A, 2.5Ω
General Description
The MDD3N50 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and exce |
 MagnaChip |
|
| MDD310-12N1 | HIgh Power Diode Modules
MDD 310
High Power Diode Modules
IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V
VRSM
V
900 1300 1500 1700 2100 2300
VRRM
V
800 1200 1400 1600 2000 2200
Type
MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 MDD 310-20N1 MDD 310-22N1
312
3 2
1
S |
IXYS Corporation |
|
| MDD255 | HIgh Power Diode Modules
MDD 255
High Power Diode Modules
VRSM VDSM V 1300 1500 1700 1900 2100 2300 Symbol IFRMS IFAVM IFSM VRRM VDRM V 1200 1400 1600 1800 2000 2200 MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 MDD 255-20N1 MDD 255-22N1 Maximum Ratings 450 270 t = 10 ms (50 H |
IXYS Corporation |
|
| MDD56-12N1B | HIgh Power Diode Modules
Diode Modules
MDD 56
IFRMS = 2x 150 A IFAVM = 2x 95 A VRRM = 800-1800 V
VRSM
V
900 1300 1500 1700 1900
VRRM
V
800 1200 1400 1600 1800
Type
MDD 56-08N1 B MDD 56-12N1 B MDD 56-14N1 B MDD 56-16N1 B MDD 56-18N1 B
3 1 2 TO-240 AA
3
2
1
Symbol I
FRMS
IFAVM |
IXYS Corporation |
|
| MDD310 | HIgh Power Diode Modules
MDD 310
High Power Diode Modules
IFRMS = 2x 480 A IFAVM = 2x 305 A VRRM = 800-2200 V
3
VRSM V 900 1300 1500 1700 2100 2300 Symbol IFRMS IFAVM IFSM
VRRM V 800 1200 1400 1600 2000 2200
Type
3
1
2 1
2
MDD 310-08N1 MDD 310-12N1 MDD 310-14N1 MDD 310-16N1 |
IXYS Corporation |
|
| MDD3752A | P-channel Trench MOSFET MDD3752A – P-Channel Trench MOSFET
MDD3752A
P-Channel Trench MOSFET, -40V, -43A, 17mΩ
General Description
The MDD3752A uses advanced MagnaChip’s Trench MOSFET Technology to provided high performance in onstate resistance, switching performance and reliability.
Low RDS(ON), |
MagnaChip |
|
| MDD250-14N1 | HIgh Power Diode Modules
High Power Diode Modules
VRSM V
900 1300 1500 1700
VRRM V
800 1200 1400 1600
Type
MDD 250-08N1 MDD 250-12N1 MDD 250-14N1 MDD 250-16N1
MDD 250
IFRMS = 2x 450 A IFAVM = 2x 290 A VRRM = 800-1600 V
312
3 2
1
Symbol IFRMS IFAVM I
FSM
òi2dt
TVJ T
VJM
Tstg V |
IXYS Corporation |
|
| MDD312-22N1 | High Power Diode Modules MDD 312
High Power Diode Modules
VRSM VDSM V 1300 1500 1700 1900 2100 2300 Symbol IFRMS IFAVM IFSM VRRM VDRM V 1200 1400 1600 1800 2000 2200 Type
3 1 2
IFRMS = 2x520 A IFAVM = 2x310 A VRRM = 1200-2200 V
3 2
MDD MDD MDD MDD MDD MDD
312-12N1 312-14N1 312-16N1 312-18N1 312-20N1 |
 IXYS |
|
Ссылка Поделиться :
[1]
Последние обновления
| Номер в каталоге | Описание | Производители | |
| CD4515BC | The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. |
 Fairchild Semiconductor |
|
| HV101WU1-1E6 | HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. |
 HYDIS |
|
|
На первой странице data sheets приводятся: |
| DataSheet26.com | 2020 | Контакты |