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MBR2050PT даташит

Функция этой детали – «20.0 Amps. Schottky Barrier Rectifiers».



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Номер в каталоге Производители Описание PDF
MBR2050PT Taiwan Semiconductor
Taiwan Semiconductor
  20.0 AMPS. Schottky Barrier Rectifiers

CREAT BY ART MBR2035PT - MBR20200PT 20.0AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction — Low power loss, high efficiency — High current capability, low forward voltage drop — High surge capability — For use in low voltage - high frequency inventers, free wheeling, and polarity protection applications — Guard-ring for overvoltage protectio
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MBR2050PT LGE
LGE
  Schottky Barrier Rectifiers

Features High s urge capacity. For us e in low voltage, high frequency inverters , free 1wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. Mechanical Data Cas e:JEDEC TO-3P(TO-247AD),m olded plas tic body Term inals :Leads, s olderable per MIL-STD-750, 1 1 Method 2026 Polarity: As m arked Pos ition: Any Weight: 0.223 ounce, 6.3 grams MBR2030PT-MBR2060PT Schottky Barrier Rectifie
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MBR2050PT GALAXY ELECTRICAL
GALAXY ELECTRICAL
  SCHOTTKY BARRIER RECTIFIER

BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER FEATURES High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. MECHANICAL DATA Cas e:JEDEC TO-3P(TO-247AD),m olded plas tic body Term inals :Leads, s olderable per MIL-STD-750, 1 1 Method 2026 Polarity: As m arked Pos ition: Any Weight: 0.223 ounce, 6.3 gr
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MBR2050PT ETC
ETC
  Schottky Barrier Rectifiers

Features High s urge capacity. For us e in low voltage, high frequency inverters , free 1wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. Mechanical Data Cas e:JEDEC TO-3P(TO-247AD),m olded plas tic body Term inals :Leads, s olderable per MIL-STD-750, 1 1 Method 2026 Polarity: As m arked Pos ition: Any Weight: 0.223 ounce, 6.3 grams MBR2030PT-MBR2060PT Schottky Barrier Rectifie
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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