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MBR2050PT даташитФункция этой детали – «20.0 Amps. Schottky Barrier Rectifiers». |
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Номер в каталоге | Производители | Описание | |
MBR2050PT | Taiwan Semiconductor |
20.0 AMPS. Schottky Barrier Rectifiers CREAT BY ART
MBR2035PT - MBR20200PT
20.0AMPS. Schottky Barrier Rectifiers
TO-3P/TO-247AD
Features
UL Recognized File # E-326243
Plastic material used carriers Underwriters Laboratory Classification 94V-0
Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability
For use in low voltage - high frequency inventers, free wheeling, and polarity protection applications
Guard-ring for overvoltage protectio |
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MBR2050PT | LGE |
Schottky Barrier Rectifiers Features
High s urge capacity. For us e in low voltage, high frequency inverters , free 1wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.
Mechanical Data
Cas e:JEDEC TO-3P(TO-247AD),m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750, 1 1 Method 2026
Polarity: As m arked Pos ition: Any Weight: 0.223 ounce, 6.3 grams
MBR2030PT-MBR2060PT
Schottky Barrier Rectifie |
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MBR2050PT | GALAXY ELECTRICAL |
SCHOTTKY BARRIER RECTIFIER BL GALAXY ELECTRICAL
SCHOTTKY BARRIER RECTIFIER
FEATURES High s urge capacity. For us e in low voltage, high frequency inverters , free
111wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.
MECHANICAL DATA
Cas e:JEDEC TO-3P(TO-247AD),m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750, 1 1 Method 2026
Polarity: As m arked Pos ition: Any Weight: 0.223 ounce, 6.3 gr |
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MBR2050PT | ETC |
Schottky Barrier Rectifiers Features
High s urge capacity. For us e in low voltage, high frequency inverters , free 1wheeling, and polarity protection applications . Metal s ilicon junction, m ajority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection.
Mechanical Data
Cas e:JEDEC TO-3P(TO-247AD),m olded plas tic body
Term inals :Leads, s olderable per MIL-STD-750, 1 1 Method 2026
Polarity: As m arked Pos ition: Any Weight: 0.223 ounce, 6.3 grams
MBR2030PT-MBR2060PT
Schottky Barrier Rectifie |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |