|
MBR20100PT даташитФункция этой детали – «20.0 Amps. Schottky Barrier Rectifiers». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MBR20100PT | Taiwan Semiconductor |
20.0 AMPS. Schottky Barrier Rectifiers CREAT BY ART
MBR2035PT - MBR20200PT
20.0AMPS. Schottky Barrier Rectifiers
TO-3P/TO-247AD
Features
UL Recognized File # E-326243
Plastic material used carriers Underwriters Laboratory Classification 94V-0
Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability
For use in low voltage - high frequency inventers, free wheeling, and polarity protection applications
Guard-ring for overvoltage protectio |
|
MBR20100PT | GALAXY ELECTRICAL |
DUAL SCHOTTKY RECTIFIERS BL GALAXY ELECTRICAL
MBR2070PT---MBR20100PT
DUAL SCHOTTKY RECTIFIERS
VOLTAGE RANGE: 70 - 100 V CURRENT: 20 A
FEATURES
High surge capacity. For use in low voltage, high frequency inverters, free 111 wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction.
High current capacity, low forward voltage drop.
Guard ring for over voltage protection.
MECHANICAL DATA
Case:JEDEC TO-3P(TO-247AD),molded plastic body Terminals:Leads, solderable per MIL-STD-750, 11 Method 2026 Polarity: |
|
MBR20100PT | FAGOR |
20.0 Amp. Schottky Barrier Rectifier MBR2045PT ....... MBR20150PT
20.0 Amp. Schottky Barrier Rectifier
TO-3P
123
12 3 Case
Common Cathode Suffix "C"
Voltage 45 V to 150 V
Current 20 A
• Plastic material used carries Underwriters Laboratory Classifications 94V-0
• Metal silicon junction, majority carrier conduction • Low power loss, high efficiency. • High current capability, low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
• High temp |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |