даташит M5M4257L-20 IC Даташиты PDF

	Номер в каталоге	Описание	Производители	PDF
1	M5M4257L-20	256K-Bit DRAM MITSUBISHI LSls M5M4257L.12, ·15, ·20 262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems where high speed, low power dissipation, and low costs are essential. The use of double-layer polysilicon process combined with silicide technology and a singletransistor dynamic storage cell provide high circuit density at reduced costs, and the u	Mitsubishi

M5M4257 даташита ( переписка )

Номер в каталоге	Описание	Производители	PDF
M5M4257S-15	256K-Bit DRAM MITSUBISHI LSls MSM42S7S·12, -15, -20 262 i44-BIT (262 i44-WORD BY i-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 l44-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems wher	Mitsubishi
M5M4257P-20	256K-Bit DRAM MITSUBISHI LSls M5M4257P-12, -15, -20 262 144·BIT (262 144·WORD BY I.BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems whe	Mitsubishi
M5M4257P-12	256K-Bit DRAM MITSUBISHI LSls M5M4257P-12, -15, -20 262 144·BIT (262 144·WORD BY I.BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems whe	Mitsubishi
M5M4257L-12	256K-Bit DRAM MITSUBISHI LSls M5M4257L.12, ·15, ·20 262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems whe	Mitsubishi
M5M4257S-20	256K-Bit DRAM MITSUBISHI LSls MSM42S7S·12, -15, -20 262 i44-BIT (262 i44-WORD BY i-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 l44-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems wher	Mitsubishi
M5M4257S-12	256K-Bit DRAM MITSUBISHI LSls MSM42S7S·12, -15, -20 262 i44-BIT (262 i44-WORD BY i-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 l44-word by l-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems wher	Mitsubishi
M5M4257P-15	256K-Bit DRAM MITSUBISHI LSls M5M4257P-12, -15, -20 262 144·BIT (262 144·WORD BY I.BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems whe	Mitsubishi
M5M4257L-15	256K-Bit DRAM MITSUBISHI LSls M5M4257L.12, ·15, ·20 262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by 1-bit dynamic RAMs, fabricated with the high performance N-channel silicon gate MOS process, and is ideal for large-capacity memory systems whe	Mitsubishi

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Последние обновления

Номер в каталоге	Описание	Производители	PDF
CD4515BC	The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.	Fairchild Semiconductor
HV101WU1-1E6	HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.	HYDIS

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