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M27W800-150F6TR даташит

Функция этой детали – «8 Mbit 1mb X 8 Or 512kb X».



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Номер в каталоге Производители Описание PDF
M27W800-150F6TR STMicroelectronics
STMicroelectronics
  8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM

M27W800 8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V 42 42 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 30mA at 8MHz – Standby Current 15µA 1 1 FDIP42W (F) PDIP42 (B) s s s s s PROGRAMMING VOLTAGE: 12.5V ± 0.25V PROGRAMMING TIME: 50µs/word ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code
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Это результат поиска, начинающийся с "27W800", "M27W800-150F"

Номер в каталоге Производители Описание PDF
M27W800 STMicroelectronics
STMicroelectronics

8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM

M27W800 8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V 42 42 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POW
pdf
M27W800-100B6TR STMicroelectronics
STMicroelectronics

8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM

M27W800 8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V 42 42 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POW
pdf
M27W800-100F6TR STMicroelectronics
STMicroelectronics

8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM

M27W800 8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V 42 42 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POW
pdf
M27W800-100K6TR STMicroelectronics
STMicroelectronics

8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM

M27W800 8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V 42 42 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POW
pdf
M27W800-120B6TR STMicroelectronics
STMicroelectronics

8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM

M27W800 8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V 42 42 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POW
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M27W800-120F6TR STMicroelectronics
STMicroelectronics

8 Mbit 1Mb x 8 or 512Kb x 16 Low Voltage UV EPROM and OTP EPROM

M27W800 8 Mbit (1Mb x 8 or 512Kb x 16) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V 42 42 s s BYTE-WIDE or WORD-WIDE CONFIGURABLE 8 Mbit MASK ROM REPLACEMENT LOW POW
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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