|
LP121WX4 даташитФункция этой детали – «PDF». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
LP121WX4-TLA1 | LG |
WXGA TFT LCD Product Specification
SPECIFICATION FOR
APPROVAL
LP121WX4 Liquid Crystal Display
( ● ) Preliminary Specification ( ) Final Specification
Title
Customer MODEL
Panasonic
12.1” WXGA TFT LCD
SUPPLIER
LG Display Co., Ltd.
*MODEL
LP121WX4
Suffix
TLA1
*When you obtain standard approval, please use the above model name without suffix
APPROVED BY / / /
SIGNATURE
Please return 1 copy for your confirmation with your signature and comments.
APPROVED BY
SIGNATURE
H. S. Kim / G.Manager
REVIEWED BY C. I. Kim / M |
Это результат поиска, начинающийся с "121WX4", "LP121WX4-T" |
Номер в каталоге | Производители | Описание | |
HV121WX4-100 | BOE |
TFT LCD Module www.smarterglass.com 978 997 4104 [email protected]
PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HYDIS AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BOE HYDIS AND MUST BE RETURNED TO BOE HYDIS UPON ITS REQUEST
TITLE : HV121WX4-100 Pr |
|
HV121WX4-110 | HYDIS |
TFT LCD Global LCD Panel Exchange Center
www.panelook.com
PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF HYDIS AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF HYDIS AND MUST BE RETURNED TO HYDIS UPON ITS REQUEST
TITLE : HV121WX4-110 Product Specificatio |
|
HV121WX4-120 | HYDIS |
TFT LCD Module PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF HYDIS AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF HYDIS AND MUST BE RETURNED TO HYDIS UPON ITS REQUEST
TITLE : HV121WX4-120 Product Specification for Customer Rev. A
HYDIS Technologies
SPEC. NUM |
|
1214GN-400LV | Microsemi |
Broad Band 1214GN-400LV
400 Watts - 50 Volts, 4.5ms, 30% Broad Band 1200 - 1400 MHz
GENERAL DESCRIPTION
The 1214GN-400LV is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 16dB gain, 400 Watts of pulsed RF output power at 4.5ms pulse widt |
|
1S1214 | American Microsemiconductor |
Diode (spec sheet) |
|
2SA1214 | Inchange Semiconductor |
Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1214
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -50V (Min) ·Good Linearity of hFE ·Wide Area of Safe Operation
APPLICATIONS ·Desinged for low frequency power amplifier app |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |