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KTC4512 даташитФункция этой детали – «Epitaxial Planar NPN Transistor (high Power Amplifier)». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
KTC4512 | KEC(Korea Electronics) |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH POWER AMPLIFIER) SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌRecommended for 30Wᴕ35W Audio Frequency
Amplifier Output Stage.
A R S
KTC4512
EPITAXIAL PLANAR NPN TRANSISTOR
E
F
D
P
ᴌComplementary to KTA1726.
Q
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 80 80 6 6 3 50 15 |
Это результат поиска, начинающийся с "4512", "KTC4" |
Номер в каталоге | Производители | Описание | |
2CL4512 | SiPower |
(2CL4509 / 2CL4512) High Voltage Diodes 2CL4509 2CL4512
Power Semiconductor Technology High Voltage Diodes for Micro-Wave Oven
Features
IF AV 450mA VRRM 9kV ,12kV High reliability
Outline Dimensions and Mark
Unit mm
Code Lot No. Cathode Mark
7.5
0.5 1.2 0.03
Applications
Rectification for high voltage power supply |
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2CL4512H | SiPower |
High Voltage Diodes 2CL4509H 2CL4512H
Power Semiconductor Technology High Voltage Diodes for Micro-Wave Oven
Features
IF
AV
Outline Dimensions and Mark
Unit mm
Code Lot No. Cathode Mark
450mA
VRRM 9kV ,12kV High reliability
7.5 0.5 1.2 0.03
Applications
Rectification for high voltage power sup |
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2SC4512 | Sanken electric |
Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose) 2SC4512
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726) sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4512 120 80 6 6 3 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
Application : Audio and General Purpose
(Ta |
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2SC4512 | SavantIC |
SILICON POWER TRANSISTOR
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4512
·Wit
DESCRIPTION With TO-220C package ·Complement to type 2SA1726 APPLICATIONS ·Audio and General Purpose
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emi |
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5SHY35L4512 | ABB |
Asymmetric Integrated Gate- Commutated Thyristor VDRM ITGQM ITSM V(T0) rT VDC-link
= = = = = =
4500 4000 35×103 1.15 0.21 2800
V A A V mΩ V
Asymmetric Integrated GateCommutated Thyristor
5SHY 35L4512
Doc. No. 5SYA1233-02 June 07
• Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and wide |
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AF4512C | Anachip |
P & N-Channel 30-V (D-S) MOSFET AF4512C
P & N-Channel 30-V (D-S) MOSFET Features
-Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter applicat |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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