DataSheet26.com


KTC4512 даташит

Функция этой детали – «Epitaxial Planar NPN Transistor (high Power Amplifier)».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
KTC4512 KEC(Korea Electronics)
KEC(Korea Electronics)
  EPITAXIAL PLANAR NPN TRANSISTOR (HIGH POWER AMPLIFIER)

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ᴌRecommended for 30Wᴕ35W Audio Frequency Amplifier Output Stage. A R S KTC4512 EPITAXIAL PLANAR NPN TRANSISTOR E F D P ᴌComplementary to KTA1726. Q MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 80 80 6 6 3 50 15
pdf

Это результат поиска, начинающийся с "4512", "KTC4"

Номер в каталоге Производители Описание PDF
2CL4512 SiPower
SiPower

(2CL4509 / 2CL4512) High Voltage Diodes

2CL4509 2CL4512 Power Semiconductor Technology High Voltage Diodes for Micro-Wave Oven Features IF AV 450mA VRRM 9kV ,12kV High reliability Outline Dimensions and Mark Unit mm Code Lot No. Cathode Mark 7.5 0.5 1.2 0.03 Applications Rectification for high voltage power supply
pdf
2CL4512H SiPower
SiPower

High Voltage Diodes

2CL4509H 2CL4512H Power Semiconductor Technology High Voltage Diodes for Micro-Wave Oven Features IF AV Outline Dimensions and Mark Unit mm Code Lot No. Cathode Mark 450mA VRRM 9kV ,12kV High reliability 7.5 0.5 1.2 0.03 Applications Rectification for high voltage power sup
pdf
2SC4512 Sanken electric
Sanken electric

Silicon NPN Triple Diffused Planar Transistor(Audio and General Purpose)

2SC4512 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1726) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4512 120 80 6 6 3 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Application : Audio and General Purpose (Ta
pdf
2SC4512 SavantIC
SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4512 ·Wit DESCRIPTION With TO-220C package ·Complement to type 2SA1726 APPLICATIONS ·Audio and General Purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emi
pdf
5SHY35L4512 ABB
ABB

Asymmetric Integrated Gate- Commutated Thyristor

VDRM ITGQM ITSM V(T0) rT VDC-link = = = = = = 4500 4000 35×103 1.15 0.21 2800 V A A V mΩ V Asymmetric Integrated GateCommutated Thyristor 5SHY 35L4512 Doc. No. 5SYA1233-02 June 07 • Lowest on state voltage (2V @ 4000A) • Optimized for low frequency (<100 Hz) and wide
pdf
AF4512C Anachip
Anachip

P & N-Channel 30-V (D-S) MOSFET

AF4512C P & N-Channel 30-V (D-S) MOSFET Features -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter applicat
pdf

[1]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты