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Datasheet KTC4377 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | KTC4377 | NPN Transistor RoHS KTC4377
KTC4377 TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: 0.5 W (Tamb=25℃)
.,LCollector current
ICM: 2 Collector-base voltage
A
OV(BR)CBO:
30 V
Operating and storage junction temperature range
CTJ, Tstg: -55℃ to +150℃
SOT-89
1. BASE
2. COLLECTOR 3. EMITTER
1 2 3
IC |
 WEJ |
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| 5 | KTC4377 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
KTC4377
EPITAXIAL PLANAR NPN TRANSISTOR
STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION.
FEATURES High DC Current Gain and Excellent hFE Linearity : hFE(1)=140 600(VCE=1V, IC=0.5A) : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A). Low Saturation Voltage : VCE(sat)=0.5V( |
 KEC |
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| 4 | KTC4377 | EPITAXIAL PLANAR NPN TRANSISTOR (STROBO FLASH/ HIGH CURRENT) Free Datasheet http:///
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.gif "KEC(Korea Electronics)"){kind=logo} KEC(Korea Electronics) |
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| 3 | KTC4377 | TRANSISTOR SMD Type
Transistors Diodes IC Transistor T
Product specification
KTC4377
SOT-89
Unit:mm
1.50 ±0.1
■ Features
● Collector Power Dissipation: PC=500mW ● Collector Current: IC=2A
4.50±0.1 1.80±0.1
1
0.48±0.1
2
3
0.80±0.1 0.44±0.1
0.53±0.1
3.00±0.1
0.40±0.1
2.60±0.1
2.50± |
 TY Semiconductor |
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