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Datasheet KTC4370 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | KTC4370 | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTC4370
DESCRIPTION ·High Collector-Emitter Breakdown Voltage
VCEO= 160V(Min) ·Complement to Type KTA1659
APPLICATIONS ·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETE |
 Inchange Semiconductor |
 |
| 4 | KTC4370 | EPITAXIAL PLANAR NPN TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
KTC4370/A
EPITAXIAL PLANAR NPN TRANSISTOR
HIGH VOLTAGE APPLICATION.
FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTA1659/A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
KTC4370 KTC4370A
Collector-Emitter Voltage
KTC4370 |
 KEC |
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| 3 | KTC4370A | Silicon NPN Power Transistors INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTC4370A
DESCRIPTION ·High Collector-Emitter Breakdown Voltage
VCEO= 180V(Min) ·Complement to Type KTA1659A
APPLICATIONS ·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME |
Inchange Semiconductor |
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| 2 | KTC4370A | NPN Transistors DIP Type
Transistors
■ Features
● High Transition Frequency ● Complementary to KTA1659A
15.87 ±0.20 3.30 ±0.20
NPN Transistors KTC4370A
TO-220F
±0.20
φ3.18±0.20
±0.20
2.54 ±0.20
Unit: mm 0.70 ±0.20
6.68 ±0.20
12.42 ±0.20
1.47max
■ Absolute Maximum Ratings Ta = 25℃
Pa |
 Kexin |
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