KTB даташит

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624. KTB1124 EPITAXIAL PLANAR PNP TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current Collector Power Dissipation Junction

SEMICONDUCTOR TECHNICAL DATA LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT FEATURES High Power Dissipation : PC=1.5W(Ta=25 Complementary to KTD1691. ) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse * Base Current VCBO VCEO VEBO IC ICP IB Collector Power Dissipation Ta=25 Tc=25 PC Junction Temperature Tj Storage Temperature Range Tstg * PW 10ms, Duty Cycle 50% RATING -60 -60 -7 -5 -8 -1 1.5 20 150 -55 15

SEMICONDUCTOR TECHNICAL DATA DRIVER APPLICATIONS. FEATURES ᴌAF amplifier, solenoid drivers, LED drivers. ᴌDarlington connection. ᴌHigh DC current gain. ᴌVery small-sized package permitting sets to be made smaller and slimer. ᴌComplementary to KTD1854T. C L KTB1234T EPITAXIAL PLANAR PNP TRANSISTOR E K B DIM A B G 2 3 C D MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 + 2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 A F D 1 E F G H I J K

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURE ᴌHigh Breakdown Voltage and High Current : VCEO=-80V, IC=-1A. ᴌLow VCE(sat) ᴌComplementary to KTD1863. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IE PC Tj Tstg RATING -80 -80 -5 -1 1 1 150 -55ᴕ150 UNIT V V V A A W ᴱ ᴱ O D KTB1241 EPITAX