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KTB даташит ( Даташиты, Даташиты ) |
| Номер в каталоге | Описание | Производители | ||
| 50 | KTB1124 | EPITAXIAL PLANAR PNP TRANSISTOR (VOLTAGE REGULATOR RELAY LAMP DRIVER/ ELECTRICAL EQUIPMENT) |
.gif "KEC(Korea Electronics)"){kind=logo} KEC(Korea Electronics) |
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| 49 | KTB1124 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES Adoption of MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed. Large current capacity and wide ASO. Complementary to KTD1624.
KTB1124
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Vollector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current(Pulse) Base Current
Collector Power Dissipation
Junction |
 KEC |
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| 48 | KTB1151 | EPITAXIAL PLANAR PNP TRANSISTOR (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT) |
KEC(Korea Electronics) |
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| 47 | KTB1151 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT
FEATURES High Power Dissipation : PC=1.5W(Ta=25 Complementary to KTD1691.
)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse *
Base Current
VCBO VCEO VEBO
IC ICP IB
Collector Power Dissipation
Ta=25 Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
* PW 10ms, Duty Cycle 50%
RATING -60 -60 -7 -5 -8 -1 1.5 20 150
-55 15 |
KEC |
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| 46 | KTB1234T | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
DRIVER APPLICATIONS. FEATURES ᴌAF amplifier, solenoid drivers, LED drivers. ᴌDarlington connection. ᴌHigh DC current gain. ᴌVery small-sized package permitting sets to be made smaller and slimer. ᴌComplementary to KTD1854T.
C L
KTB1234T
EPITAXIAL PLANAR PNP TRANSISTOR
E K B
DIM A B
G
2 3 C D
MILLIMETERS _ 0.2 2.9 + 1.6+0.2/-0.1 _ 0.05 0.70 + _ 0.1 0.4 +
2.8+0.2/-0.3 _ 0.2 1.9 + 0.95 _ 0.05 0.16 + 0.00-0.10 0.25+0.25/-0.15 0.60 0.55
A
F
D
1
E F G H I J K |
KEC |
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| 45 | KTB1241 | EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE) |
KEC(Korea Electronics) |
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| 44 | KTB1241 | EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURE ᴌHigh Breakdown Voltage and High Current
: VCEO=-80V, IC=-1A. ᴌLow VCE(sat) ᴌComplementary to KTD1863.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
VCBO VCEO VEBO
IC IE PC Tj Tstg
RATING -80 -80 -5 -1 1 1 150
-55ᴕ150
UNIT V V V A A W ᴱ ᴱ
O D
KTB1241
EPITAX |
KEC |
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| 43 | KTB1260 | EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE) |
KEC(Korea Electronics) |
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| DataSheet26.com | 2020 | Контакты |