|
KP120 даташитФункция этой детали – «Surface Mount Capacitive SilICon Absolute Pressure Sensor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
KP120 | Infineon Technologies |
Surface Mount Capacitive Silicon Absolute Pressure Sensor Data Sheet,V1.1, Oct. 2003
Surface Mount Capacitive Silicon Absolute Pressure Sensor KP120, KP120 Exxxx
Sensors
N e v e r
s t o p
t h i n k i n g .
Edition 2003-10-17 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany
© Infineon Technologies AG 2003.
All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We here |
Это результат поиска, начинающийся с "120", "KP" |
Номер в каталоге | Производители | Описание | |
02N120 | Infineon Technologies |
SKP02N120 Datasheet.esaSheet4U.net
SKP02N120 SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Techno |
|
0805CS-120E | DELTA |
WIRE-WOUND CHIP INDUCTOR 1. Part Description
1.1 Part Numbering (Example)
( Ex. )
0805 C S - 120 E J T S
SIZE.
0402 1.0 * 0.5 mm 0603 1.6 * 0.8 mm 0805 2.0 * 1.2 mm 1008 2.5 * 2.0 mm 1206 3.2 * 1.6 mm 1210 3.2 * 2.5 mm
SHAPE.
C : C SHAPE H : H SHAPE M : MOLDING
PROFILE.
S: STANDARD T: LOW PROFILE Q:H |
|
0805CS-120X | Coilcraft |
(0805CS Series) Chip Inductors Document 100-1
ChipInductors–0805CSSeries(2012)
These ultra-compact inductors provide exceptional Q values, even at high frequencies. They have a ceramic body and wire wound construction to provide the highest SRFs available in 0805 size.
Part number
1
Coi |
|
0809LD120 | GHZ Technology |
120 Watt / 28V / 1 Ghz LDMOS FET R.0.2P.991602-BEHRE
0809LD120
120 WATT, 28V, 1 GHz LDMOS FET
PRELIMINARY ISSUE
GENERAL DESCRIPTION
The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utiliz |
|
1.5CE120A | Central Semiconductor |
UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1.5CE6.8A THRU 1.5CE440A 1.5CE6.8CA THRU 1.5CE440CA
UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1500 WATTS, 6.8 THRU 440 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1.5CE6.8A (UniDirectional) and 1.5CE6.8CA (Bi- |
|
1.5CE120CA | Central Semiconductor |
UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1.5CE6.8A THRU 1.5CE440A 1.5CE6.8CA THRU 1.5CE440CA
UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1500 WATTS, 6.8 THRU 440 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 1.5CE6.8A (UniDirectional) and 1.5CE6.8CA (Bi- |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |