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KP120 даташит

Функция этой детали – «Surface Mount Capacitive SilICon Absolute Pressure Sensor».



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Номер в каталоге Производители Описание PDF
KP120 Infineon Technologies
Infineon Technologies
  Surface Mount Capacitive Silicon Absolute Pressure Sensor

Data Sheet,V1.1, Oct. 2003 Surface Mount Capacitive Silicon Absolute Pressure Sensor KP120, KP120 Exxxx Sensors N e v e r s t o p t h i n k i n g . Edition 2003-10-17 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2003. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We here
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Номер в каталоге Производители Описание PDF
02N120 Infineon Technologies
Infineon Technologies

SKP02N120

Datasheet.esaSheet4U.net SKP02N120 SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Techno
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0805CS-120E DELTA
DELTA

WIRE-WOUND CHIP INDUCTOR

1. Part Description 1.1 Part Numbering (Example) ( Ex. ) 0805 C S - 120 E J T S SIZE. 0402 1.0 * 0.5 mm 0603 1.6 * 0.8 mm 0805 2.0 * 1.2 mm 1008 2.5 * 2.0 mm 1206 3.2 * 1.6 mm 1210 3.2 * 2.5 mm SHAPE. C : C SHAPE H : H SHAPE M : MOLDING PROFILE. S: STANDARD T: LOW PROFILE Q:H
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0805CS-120X Coilcraft
Coilcraft

(0805CS Series) Chip Inductors

Document 100-1 ChipInductors–0805CSSeries(2012) These ultra-compact inductors provide exceptional Q values, even at high frequencies. They have a ceramic body and wire wound construction to provide the highest SRFs available in 0805 size. Part number 1 Coi
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0809LD120 GHZ Technology
GHZ Technology

120 Watt / 28V / 1 Ghz LDMOS FET

R.0.2P.991602-BEHRE 0809LD120 120 WATT, 28V, 1 GHz LDMOS FET PRELIMINARY ISSUE GENERAL DESCRIPTION The 0809LD120 is a common source N-Channel enhancement mode lateral MOSFET capable of providing 120 Watts of RF power from HF to 1 GHz. The device is nitride passivated and utiliz
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1.5CE120A Central Semiconductor
Central Semiconductor

UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS

1.5CE6.8A THRU 1.5CE440A 1.5CE6.8CA THRU 1.5CE440CA UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1500 WATTS, 6.8 THRU 440 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1.5CE6.8A (UniDirectional) and 1.5CE6.8CA (Bi-
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1.5CE120CA Central Semiconductor
Central Semiconductor

UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS

1.5CE6.8A THRU 1.5CE440A 1.5CE6.8CA THRU 1.5CE440CA UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1500 WATTS, 6.8 THRU 440 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1.5CE6.8A (UniDirectional) and 1.5CE6.8CA (Bi-
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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