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KP11N60F даташит

Функция этой детали – «N Channel Mos Field Effect Transistor».



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Номер в каталоге Производители Описание PDF
KP11N60F KEC
KEC
  N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA General Description A KP11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR C F This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 Qg(typ.)= 20nC @VGS=10V O B E G DIM MILLIMETERS L M J R D N N MAXIMUM RATING (Tc=25
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Это результат поиска, начинающийся с "11N60F", "KP11N"

Номер в каталоге Производители Описание PDF
F11N60F Fairchild Semiconductor
Fairchild Semiconductor

FCPF11N60F

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns) • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Co
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FCB11N60F Fairchild Semiconductor
Fairchild Semiconductor

N-Channel MOSFET

FCB11N60F 600V N-Channel MOSFET SuperFET FCB11N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns ) • Ultra low gate charge (typ. Qg = 40nC) • Low effective output capacitance (typ. Coss.eff = 95pF) • 100
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FCP11N60F Fairchild Semiconductor
Fairchild Semiconductor

600V N-Channel MOSFET

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns) • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Co
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FCPF11N60F Fairchild Semiconductor
Fairchild Semiconductor

600V N-Channel MOSFET

FCP11N60F/FCPF11N60F 600V N-Channel MOSFET SuperFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET Features • 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns) • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Co
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KPS11N60F KEC
KEC

N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA KPS11N60F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitabl
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NCE11N60F NCE Power Semiconductor
NCE Power Semiconductor

N-Channel Super Junction Power MOSFET

NCE11N60D,NCE11N60,NCE11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirem
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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