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KP11N60F даташитФункция этой детали – «N Channel Mos Field Effect Transistor». |
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Номер в каталоге | Производители | Описание | |
KP11N60F | KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
General Description
A
KP11N60F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
C
F
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES
VDSS=600V, ID=11A Drain-Source ON Resistance : RDS(ON)(Max)=0.38 Qg(typ.)= 20nC @VGS=10V
O
B
E
G
DIM
MILLIMETERS
L
M
J
R
D N N
MAXIMUM RATING (Tc=25
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Это результат поиска, начинающийся с "11N60F", "KP11N" |
Номер в каталоге | Производители | Описание | |
F11N60F | Fairchild Semiconductor |
FCPF11N60F FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
SuperFET
FCP11N60F/FCPF11N60F
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns) • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Co |
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FCB11N60F | Fairchild Semiconductor |
N-Channel MOSFET FCB11N60F 600V N-Channel MOSFET
SuperFET
FCB11N60F
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns ) • Ultra low gate charge (typ. Qg = 40nC) • Low effective output capacitance (typ. Coss.eff = 95pF) • 100 |
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FCP11N60F | Fairchild Semiconductor |
600V N-Channel MOSFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
SuperFET
FCP11N60F/FCPF11N60F
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns) • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Co |
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FCPF11N60F | Fairchild Semiconductor |
600V N-Channel MOSFET FCP11N60F/FCPF11N60F 600V N-Channel MOSFET
SuperFET
FCP11N60F/FCPF11N60F
600V N-Channel MOSFET
Features
• 650V @TJ = 150°C • Typ. RDS(on) = 0.32Ω • Fast Recovery Type ( trr = 120ns) • Ultra Low Gate Charge (typ. Qg = 40nC) • Low Effective Output Capacitance (typ. Co |
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KPS11N60F | KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
KPS11N60F
N CHANNEL MOS FIELD EFFECT TRANSISTOR
General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitabl |
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NCE11N60F | NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET NCE11N60D,NCE11N60,NCE11N60F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirem |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |