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KP11N60D даташитФункция этой детали – «N Channel Mos Field Effect Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
KP11N60D | KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES
VDSS=600V, ID=11A Drain-Source ON Resistance :
G H
KP11N60D
N CHANNEL MOS FIELD EFFECT TRANSISTOR
A C
K D L
B
J
E N
RDS(ON)(Max)=0.38 Qg(typ.)= 20nC
@VGS=10V
F
F
M
DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20 |
Это результат поиска, начинающийся с "11N60D", "KP11N" |
Номер в каталоге | Производители | Описание | |
KPS11N60D | KEC |
N CHANNEL MOS FIELD EFFECT TRANSISTOR SEMICONDUCTOR
TECHNICAL DATA
General Description
This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switchin |
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NCE11N60D | NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET NCE11N60D,NCE11N60,NCE11N60F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirem |
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STD11N60DM2 | STMicroelectronics |
N-CHANNEL POWER MOSFET STD11N60DM2
N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code STD11N60DM2
VDS @ TJmax.
650 V
RDS(on) max.
0.420 Ω
ID 10 A
PTOT 110 W
Fast-recovery bod |
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STF11N60DM2 | STMicroelectronics |
N-CHANNEL POWER MOSFET STF11N60DM2
N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
Datasheet - production data
3 2 1
TO-220FP
Figure 1: Internal schematic diagram
Features
Order code STF11N60DM2
VDS @ TJmax.
650 V
RDS(on) max.
0.420 Ω
ID PTOT 10 A 25 W
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STP11N60DM2 | STMicroelectronics |
N-CHANNEL POWER MOSFET STP11N60DM2
N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2 Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code STP11N60DM2
VDS @ TJmax.
650 V
RDS(on) max.
0.420 Ω
ID 10 A
PTOT 110 W
Fast-recovery b |
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2SA1160 | Toshiba Semiconductor |
Silicon PNP Epitaxial Type Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications Medium Power Amplifier Applications
2SA1160
Unit: mm
• High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |