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KP11N60D даташит

Функция этой детали – «N Channel Mos Field Effect Transistor».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
KP11N60D KEC
KEC
  N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=600V, ID=11A Drain-Source ON Resistance : G H KP11N60D N CHANNEL MOS FIELD EFFECT TRANSISTOR A C K D L B J E N RDS(ON)(Max)=0.38 Qg(typ.)= 20nC @VGS=10V F F M DIM MILLIMETERS _ 0.20 A 6.60 + _ 0.20
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Это результат поиска, начинающийся с "11N60D", "KP11N"

Номер в каталоге Производители Описание PDF
KPS11N60D KEC
KEC

N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA General Description This Super Junction MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switchin
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NCE11N60D NCE Power Semiconductor
NCE Power Semiconductor

N-Channel Super Junction Power MOSFET

NCE11N60D,NCE11N60,NCE11N60F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirem
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STD11N60DM2 STMicroelectronics
STMicroelectronics

N-CHANNEL POWER MOSFET

STD11N60DM2 N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STD11N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.420 Ω ID 10 A PTOT 110 W  Fast-recovery bod
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STF11N60DM2 STMicroelectronics
STMicroelectronics

N-CHANNEL POWER MOSFET

STF11N60DM2 N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data 3 2 1 TO-220FP Figure 1: Internal schematic diagram Features Order code STF11N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.420 Ω ID PTOT 10 A 25 W 
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STP11N60DM2 STMicroelectronics
STMicroelectronics

N-CHANNEL POWER MOSFET

STP11N60DM2 N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2 Power MOSFET in a TO-220 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STP11N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.420 Ω ID 10 A PTOT 110 W  Fast-recovery b
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2SA1160 Toshiba Semiconductor
Toshiba Semiconductor

Silicon PNP Epitaxial Type Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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