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KIA65N06 даташитФункция этой детали – «60v N-channel Mosfet». |
Показать результаты поиска |
| Номер в каталоге | Производители | Описание | |
| KIA65N06 |  KIA |
60V N-CHANNEL MOSFET KIA
SEMICONDUCTORS
60V N-CHANNEL MOSFET
65N06
1.Description
These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching f |
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Это результат поиска, начинающийся с "65N06", "KIA65" |
| Номер в каталоге | Производители | Описание | |
| 65N06 | KIA |
60V N-CHANNEL MOSFET KIA
SEMICONDUCTORS
60V N-CHANNEL MOSFET
65N06
1.Description
These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resist |
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| BSZ065N06LS5 |  Infineon |
MOSFET ( Transistor ) BSZ065N06LS5
MOSFET
OptiMOSTMPower-Transistor,60V
Features
•OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;R |
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| FDP65N06 |  Fairchild Semiconductor |
N-Channel MOSFET
FDP65N06 60V N-Channel MOSFET
June 2006
UniFET
FDP65N06
60V N-Channel MOSFET
Features
• • • • • 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 132nC) Low Crss ( typical 35pF) Fast switching Improved dv/dt capability
TM
Descri |
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| FQA65N06 | Fairchild Semiconductor |
60V N-Channel MOSFET FQA65N06
May 2001
QFET
FQA65N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimi |
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| FQAF65N06 | Fairchild Semiconductor |
60V N-Channel MOSFET FQAF65N06
May 2001
QFET
FQAF65N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini |
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| FQB65N06 | Fairchild Semiconductor |
60V N-Channel MOSFET FQB65N06 / FQI65N06
May 2001
QFET
FQB65N06 / FQI65N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especia |
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Последние обновления
| Номер в каталоге | Производители | Описание | |
| 2N3904 |  Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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| NE555 |  ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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