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KIA65N06 даташит

Функция этой детали – «60v N-channel Mosfet».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
KIA65N06 KIA
KIA
  60V N-CHANNEL MOSFET

KIA SEMICONDUCTORS 60V N-CHANNEL MOSFET 65N06 1.Description These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching f
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Это результат поиска, начинающийся с "65N06", "KIA65"

Номер в каталоге Производители Описание PDF
65N06 KIA
KIA

60V N-CHANNEL MOSFET

KIA SEMICONDUCTORS 60V N-CHANNEL MOSFET 65N06 1.Description These N-Channel enhancement mode power field effect transistors are produced using KIA’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resist
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BSZ065N06LS5 Infineon
Infineon

MOSFET ( Transistor )

BSZ065N06LS5 MOSFET OptiMOSTMPower-Transistor,60V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;R
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FDP65N06 Fairchild Semiconductor
Fairchild Semiconductor

N-Channel MOSFET

FDP65N06 60V N-Channel MOSFET June 2006 UniFET FDP65N06 60V N-Channel MOSFET Features • • • • • 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V Low gate charge ( typical 132nC) Low Crss ( typical 35pF) Fast switching Improved dv/dt capability TM Descri
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FQA65N06 Fairchild Semiconductor
Fairchild Semiconductor

60V N-Channel MOSFET

FQA65N06 May 2001 QFET FQA65N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimi
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FQAF65N06 Fairchild Semiconductor
Fairchild Semiconductor

60V N-Channel MOSFET

FQAF65N06 May 2001 QFET FQAF65N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini
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FQB65N06 Fairchild Semiconductor
Fairchild Semiconductor

60V N-Channel MOSFET

FQB65N06 / FQI65N06 May 2001 QFET FQB65N06 / FQI65N06 60V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especia
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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