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K9F2G08U0C даташитФункция этой детали – «2gb C-die Nand Flash». |
Показать результаты поиска |
| Номер в каталоге | Производители | Описание | |
| K9F2G08U0C |  Samsung |
2Gb C-die NAND Flash Rev. 0.2, May. 2010 K9F2G08U0C
Advance
2Gb C-die NAND Flash
Single-Level-Cell (1bit/cell)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent |
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Это результат поиска, начинающийся с "9F2G08U0C", "K9F2G08" |
| Номер в каталоге | Производители | Описание | |
| K9F2G08B0B |  Samsung Electronics |
FLASH MEMORY K9F2G08B0B K9F2G08U0B
Preliminary FLASH MEMORY
K9F2G08X0B
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR |
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| K9F2G08Q0M |  Samsung semiconductor |
FLASH MEMORY K9F2808Q0C-DCB0,DIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-DCB0,DIB0
K9F2816Q0C-DCB0,DIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-DCB0,DIB0
K9F2808U0C-VCB0,VIB0
FLASH MEMORY
Document Title
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0 1.0 Initial is |
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| K9F2G08R0A | Samsung Electronics |
(K9F2G08UxA) Flash Memory K9F2G08R0A K9F2G08U0A
FLASH MEMORY
K9F2G08UXA
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY EST |
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| K9F2G08U0A | Samsung Electronics |
(K9F2G08UxA) Flash Memory K9F2G08R0A K9F2G08U0A
FLASH MEMORY
K9F2G08UXA
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY EST |
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| K9F2G08U0B | Samsung Electronics |
FLASH MEMORY K9F2G08B0B K9F2G08U0B
Preliminary FLASH MEMORY
K9F2G08X0B
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR |
|
| K9F2G08U0M | Samsung semiconductor |
FLASH MEMORY K9F2G08Q0M K9F2G16Q0M K9F2G08U0M K9F2G16U0M
Preliminary FLASH MEMORY
Document Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1
History
1. Initial issue 1. Add the Rp vs tr ,tf & Rp vs Ibusy graph for 1.8V device (Page 34) 2. Add the dat |
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[1]
Последние обновления
| Номер в каталоге | Производители | Описание | |
| 2N3904 |  Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
| NE555 |  ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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