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Datasheet K8A500 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
10 | K8A50D | TK8A50D TK8A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK8A50D
Switching Regulator Applications
• • • • Low drain-source ON-resistance: RDS (ON) = 0.7 Ω (typ.) High forward transfer admittance: |Yfs| = 4.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 500 |
Toshiba |
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9 | K8A55DA | TK8A55DA TK8A55DA
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK8A55DA
Switching Regulator Applications
Ф3.2 ± 0.2 10 ± 0.3
Unit: mm
2.7 ± 0.2 A 3.9 3.0 1.14 ± 0.15 2.8 MAX. 2.54 1 2 3 2.6 ± 0.1 13 ± 0.5 0.69 ± 0.15 Ф0.2 M A
Absolute Maximum Ratings (Ta = 25°C)
Charact |
Toshiba |
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8 | K8A5615EBA | Flash Memory
K8A5615ET(B)A
FLASH MEMORY
Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History
Revision No. History
0.0 0.1 Advanced Revision - Change the speed code 7B : 90ns @54MHz ---> 7B : 88.5ns @54MHz Revision - Change the device version ID |
Samsung Electronics |
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7 | K8A5615ETA | Flash Memory
K8A5615ET(B)A
FLASH MEMORY
Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History
Revision No. History
0.0 0.1 Advanced Revision - Change the speed code 7B : 90ns @54MHz ---> 7B : 88.5ns @54MHz Revision - Change the device version ID |
Samsung Electronics |
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Número de pieza | Descripción | Fabricantes | |
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