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K80E08K3 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
1 K80E08K3   TK80E08K3

Target Specification TK80E08K3 ) TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS TK80E08K3 E-Bike/UPS/Inverter Unit: mm Low drain−source ON resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 7.5 mΩ (typ.) : |Yfs| = 135 S (typ.) : IDSS = 10 µA (max) (VDS = 75 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC Drain curr
Toshiba
Toshiba
pdf



K80E даташита ( переписка )

Номер в каталоге Описание Производители PDF
K80E07NE

TK80E07NE

Toshiba
Toshiba
pdf
K80E08K3

TK80E08K3

Toshiba
Toshiba
pdf



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Последние обновления

Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors. These circuits are primarily used in decoding applications where low power dissipation and/or high noise immunity is required.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices. This module has a 10.1 inch diagonally measured active area with WUXGA resolutions (1920 horizontal by 1200 vertical pixel array).

HYDIS
HYDIS
pdf

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свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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