| No | Part number | Description ( Function ) | Manufacturers | |
| 5 | K7R163684B | 512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram 1. Add the speed bin (-25) 1. Correct the JTAG ID register definition 2. Correct |
 Samsung semiconductor |
|
| 4 | K7R163684B-FC16 | 512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram 1. Add the speed bin (-25) 1. Correct the JTAG ID register definition 2. Correct |
Samsung semiconductor |
|
| 3 | K7R163684B-FC20 | 512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram 1. Add the speed bin (-25) 1. Correct the JTAG ID register definition 2. Correct |
Samsung semiconductor |
|
| 2 | K7R163684B-FC25 | 512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram 1. Add the speed bin (-25) 1. Correct the JTAG ID register definition 2. Correct |
Samsung semiconductor |
|
| 1 | K7R163684B-FC30 | 512Kx36 & 1Mx18 QDR II b4 SRAM K7R163684B K7R161884B Document Title 512Kx36 & 1Mx18 QDRTM II b4 SRAM 512Kx36-bit,1Mx18-bit QDRTM II b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Change JTAG Block diagram 1. Add the speed bin (-25) 1. Correct the JTAG ID register definition 2. Correct |
Samsung semiconductor |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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