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Datasheet K7Q161852A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | K7Q161852A | (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163652A K7Q161852A
Document Title
512Kx36-bit, 1Mx18-bit QDRTM SRAM
512Kx36 & 1Mx18 QDRTM b2 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write |  Samsung semiconductor | ram |
K7Q Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | K7Q161852A | (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163652A K7Q161852A
Document Title
512Kx36-bit, 1Mx18-bit QDRTM SRAM
512Kx36 & 1Mx18 QDRTM b2 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write Samsung semiconductor ram | | |
| 2 | K7Q161854A | (K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM
K7Q163654A K7Q161854A
Document Title
512Kx36-bit, 1Mx18-bit QDRTM SRAM
512Kx36 & 1Mx18 QDRTM b4 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write Samsung semiconductor ram | | |
| 3 | K7Q161862B | (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163662B K7Q161862B
Document Title
512Kx36-bit, 1Mx18-bit QDRTM SRAM
512Kx36 & 1Mx18 QDRTM b2 SRAM
Revision History
Rev. No. 0.0 1.0 History 1. Initial document. 1. Final spec release Draft Date Jan. 27, 2004 Mar. 18, 2004 Remark Advance Final
The attached data sheets are p Samsung semiconductor ram | | |
| 4 | K7Q161864B | (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
K7Q163664B K7Q161864B
Document Title
512Kx36-bit, 1Mx18-bit QDRTM SRAM
512Kx36 & 1Mx18 QDRTM b4 SRAM
Revision History
Rev. No. 0.0 1.0 History 1. Initial document. 1. Final spec release Draft Date Jan. 27, 2004 Mar. 18, 2004 Remark Advance Final
The attached data sheets are p Samsung semiconductor ram | | |
| 5 | K7Q161882A | (K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM
K7Q163682A K7Q161882A
Document Title
512Kx36-bit, 1Mx18-bit QDRTM SRAM
512Kx36 & 1Mx18 QDRTM b2 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Icc, Isb addition 2. 1.8V Vddq addition 3. Speed bin change 1. Changed Pin configuration at x36 organization. Samsung semiconductor ram | | |
| 6 | K7Q163652A | (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163652A K7Q161852A
Document Title
512Kx36-bit, 1Mx18-bit QDRTM SRAM
512Kx36 & 1Mx18 QDRTM b2 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write Samsung semiconductor ram | | |
| 7 | K7Q163654A | (K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM
K7Q163654A K7Q161854A
Document Title
512Kx36-bit, 1Mx18-bit QDRTM SRAM
512Kx36 & 1Mx18 QDRTM b4 SRAM
Revision History
Rev. No. 0.0 0.1 History 1. Initial document. 1. Amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write Samsung semiconductor ram | |
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