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K6X0808T1D-NF85 даташит

Функция этой детали – «32kx8 Bit Low Power Cmos StatIC Ram».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
K6X0808T1D-NF85 Samsung semiconductor
Samsung semiconductor
  32Kx8 bit Low Power CMOS Static RAM

K6X0808T1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA to 2mA - Changed ICC2 from 25mA to 20mA - Changed ISB from 3mA to 0.4mA - Changed ISB1 for K6X0808T1D-F from 10µA to 6µA - Changed ISB1 for K6X0808T1D-F from 20µA to 10µA - Changed IDR for K6X0808T1D-F 10µA to 6µA - Changed IDR for K6X0808
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Это результат поиска, начинающийся с "6X0808T1D", "K6X0808T1D-N"

Номер в каталоге Производители Описание PDF
K6X0808T1D Samsung semiconductor
Samsung semiconductor

32Kx8 bit Low Power CMOS Static RAM

K6X0808T1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA
pdf
K6X0808T1D-B Samsung semiconductor
Samsung semiconductor

32Kx8 bit Low Power CMOS Static RAM

K6X0808T1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA
pdf
K6X0808T1D-F Samsung semiconductor
Samsung semiconductor

32Kx8 bit Low Power CMOS Static RAM

K6X0808T1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA
pdf
K6X0808T1D-GB70 Samsung semiconductor
Samsung semiconductor

32Kx8 bit Low Power CMOS Static RAM

K6X0808T1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA
pdf
K6X0808T1D-GB85 Samsung semiconductor
Samsung semiconductor

32Kx8 bit Low Power CMOS Static RAM

K6X0808T1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA
pdf
K6X0808T1D-GF70 Samsung semiconductor
Samsung semiconductor

32Kx8 bit Low Power CMOS Static RAM

K6X0808T1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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