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Datasheet K6X0808T1D-NB85 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1K6X0808T1D-NB8532Kx8 bit Low Power CMOS Static RAM

K6X0808T1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 0.1 History Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA to 2mA - Changed ICC
Samsung semiconductor
Samsung semiconductor
cmos


K6X Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1K6X0808C1D32Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X
Samsung semiconductor
Samsung semiconductor
cmos
2K6X0808C1D-DF5532Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X
Samsung semiconductor
Samsung semiconductor
cmos
3K6X0808C1D-DF7032Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X
Samsung semiconductor
Samsung semiconductor
cmos
4K6X0808C1D-F32Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X
Samsung semiconductor
Samsung semiconductor
cmos
5K6X0808C1D-GF5532Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X
Samsung semiconductor
Samsung semiconductor
cmos
6K6X0808C1D-GF7032Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X
Samsung semiconductor
Samsung semiconductor
cmos
7K6X0808C1D-GQ5532Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X
Samsung semiconductor
Samsung semiconductor
cmos



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Número de pieza Descripción Fabricantes PDF
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