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K6X0808T1D-NB70 даташитФункция этой детали – «32kx8 Bit Low Power Cmos StatIC Ram». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
K6X0808T1D-NB70 | Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM K6X0808T1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA to 2mA - Changed ICC2 from 25mA to 20mA - Changed ISB from 3mA to 0.4mA - Changed ISB1 for K6X0808T1D-F from 10µA to 6µA - Changed ISB1 for K6X0808T1D-F from 20µA to 10µA - Changed IDR for K6X0808T1D-F 10µA to 6µA - Changed IDR for K6X0808 |
Это результат поиска, начинающийся с "6X0808T1D", "K6X0808T1D-N" |
Номер в каталоге | Производители | Описание | |
K6X0808T1D | Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM K6X0808T1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA |
|
K6X0808T1D-B | Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM K6X0808T1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA |
|
K6X0808T1D-F | Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM K6X0808T1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA |
|
K6X0808T1D-GB70 | Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM K6X0808T1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA |
|
K6X0808T1D-GB85 | Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM K6X0808T1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA |
|
K6X0808T1D-GF70 | Samsung semiconductor |
32Kx8 bit Low Power CMOS Static RAM K6X0808T1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 0.1
History
Initial draft revised - errata : corrected 28-SOP-525 to 28-SOP-450 in pakage type revised - Added commercial product. Finalized - Changed ICC from 3mA |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |