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K6X0808C1D-GF55 даташит

Функция этой детали – «32kx8 Bit Low Power Cmos StatIC Ram».



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Номер в каталоге Производители Описание PDF
K6X0808C1D-GF55 Samsung semiconductor
Samsung semiconductor
  32Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA - Changed IDR for K6X0808C1D-F 15µA to 10µA - Changed IDR for K6X0808C1D-Q 25µA to 20µA - Errata correction Draft Data October 09, 2002 December 16, 2003 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics.
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Это результат поиска, начинающийся с "6X0808C1D", "K6X0808C1D-G"

Номер в каталоге Производители Описание PDF
K6X0808C1D Samsung semiconductor
Samsung semiconductor

32Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA -
pdf
K6X0808C1D-DF55 Samsung semiconductor
Samsung semiconductor

32Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA -
pdf
K6X0808C1D-DF70 Samsung semiconductor
Samsung semiconductor

32Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA -
pdf
K6X0808C1D-F Samsung semiconductor
Samsung semiconductor

32Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA -
pdf
K6X0808C1D-GF70 Samsung semiconductor
Samsung semiconductor

32Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA -
pdf
K6X0808C1D-GQ55 Samsung semiconductor
Samsung semiconductor

32Kx8 bit Low Power CMOS Static RAM

K6X0808C1D Family Document Title 32Kx8 bit Low Power CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 1.0 History Initial draft Finalized - Changed ICC from 10mA to 5mA - Changed ICC1 from 8mA to 7mA - Changed ICC2 from 35mA to 25mA - Changed ISB from 3mA to 0.4mA -
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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