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Datasheet K6T4016V3C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 16 | K6T4016V3C | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM K6T4016V3C, K6T4016U3C Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No
0.0 0.1
History
Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Characteristics change ICC: |
 Samsung semiconductor |
 |
| 15 | K6T4016V3C-B | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM K6T4016V3C, K6T4016U3C Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No
0.0 0.1
History
Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Characteristics change ICC: |
Samsung semiconductor |
|
| 14 | K6T4016V3C-F | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM K6T4016V3C, K6T4016U3C Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No
0.0 0.1
History
Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Characteristics change ICC: |
Samsung semiconductor |
|
| 13 | K6T4016V3C-RB10 | 256Kx16 bit Low Power and Low Voltage CMOS Static RAM K6T4016V3C, K6T4016U3C Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No
0.0 0.1
History
Initial draft Revise - Speed bin change Commercial: 70/85ns to 70/85/100ns Industrial: 85/100ns to 70/85/100ns - DC Characteristics change ICC: |
Samsung semiconductor |
|
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