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K6T4008U1C-GB10 даташит

Функция этой детали – «512kx8 Bit Low Power And Low Voltage Cmos».



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Номер в каталоге Производители Описание PDF
K6T4008U1C-GB10 Samsung semiconductor
Samsung semiconductor
  512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 3mA → 4mA ICC2 : 35mA → 30mA ISB : 0.5mA → 0.3mA ISB1 : 10µA → 15µA for commercial parts - Add 32-TSOP1-0820 Errata correct - 32-TSOP1-0813 products: T → TG Finalize Draft Data January 13, 1998 June 12
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Это результат поиска, начинающийся с "6T4008U1C", "K6T4008U1C-G"

Номер в каталоге Производители Описание PDF
K6T4008U1C-B Samsung semiconductor
Samsung semiconductor

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea
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K6T4008U1C-F Samsung semiconductor
Samsung semiconductor

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea
pdf
K6T4008U1C-GB70 Samsung semiconductor
Samsung semiconductor

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea
pdf
K6T4008U1C-GB85 Samsung semiconductor
Samsung semiconductor

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea
pdf
K6T4008U1C-GF10 Samsung semiconductor
Samsung semiconductor

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea
pdf
K6T4008U1C-GF70 Samsung semiconductor
Samsung semiconductor

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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