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K6T4008U1C-GB10 даташитФункция этой детали – «512kx8 Bit Low Power And Low Voltage Cmos». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
K6T4008U1C-GB10 | Samsung semiconductor |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 3mA → 4mA ICC2 : 35mA → 30mA ISB : 0.5mA → 0.3mA ISB1 : 10µA → 15µA for commercial parts - Add 32-TSOP1-0820 Errata correct - 32-TSOP1-0813 products: T → TG Finalize
Draft Data
January 13, 1998 June 12 |
Это результат поиска, начинающийся с "6T4008U1C", "K6T4008U1C-G" |
Номер в каталоге | Производители | Описание | |
K6T4008U1C-B | Samsung semiconductor |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea |
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K6T4008U1C-F | Samsung semiconductor |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea |
|
K6T4008U1C-GB70 | Samsung semiconductor |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea |
|
K6T4008U1C-GB85 | Samsung semiconductor |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea |
|
K6T4008U1C-GF10 | Samsung semiconductor |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea |
|
K6T4008U1C-GF70 | Samsung semiconductor |
512Kx8 bit Low Power and Low Voltage CMOS Static RAM K6T4008V1C, K6T4008U1C Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at rea |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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