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K6T1008C2E-GL70 даташитФункция этой детали – «128kx8 Bit Low Power Cmos StatIC Ram». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
K6T1008C2E-GL70 | Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM K6T1008C2E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product. Errata correction Revise Revise - Add 55ns parts to industrial products.
Draft Data
October 12, 1998 August 30, 1999
Remark
Preliminary Final
1.01 2.0 3.0
December 1, 1999 February 14, 2000 March 3, 2000 Final Final
The attached datasheets are provided by SAMSUNG Elect |
Это результат поиска, начинающийся с "6T1008C2E", "K6T1008C2E-G" |
Номер в каталоге | Производители | Описание | |
K6T1008C2E | Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM K6T1008C2E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product. Errata correction Revise Revi |
|
K6T1008C2E-B | Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM K6T1008C2E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product. Errata correction Revise Revi |
|
K6T1008C2E-DB55 | Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM K6T1008C2E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product. Errata correction Revise Revi |
|
K6T1008C2E-DB70 | Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM K6T1008C2E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product. Errata correction Revise Revi |
|
K6T1008C2E-DL55 | Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM K6T1008C2E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product. Errata correction Revise Revi |
|
K6T1008C2E-DL70 | Samsung semiconductor |
128Kx8 bit Low Power CMOS Static RAM K6T1008C2E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product. Errata correction Revise Revi |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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