|
|
Datasheet K6T1008C2E-B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | K6T1008C2E-B | 128Kx8 bit Low Power CMOS Static RAM K6T1008C2E Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Design target Finalize - Improve tWP form 55ns to 50ns for 70ns product. - Remove 55ns speed bin from industrial product. Errata correction Revise Revise - Add 55ns parts | Samsung semiconductor | cmos |
K6T Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | K6T0808C1D | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
2 | K6T0808C1D-B | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
3 | K6T0808C1D-DB55 | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
4 | K6T0808C1D-DB70 | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
5 | K6T0808C1D-DL55 | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
6 | K6T0808C1D-DL70 | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | | |
7 | K6T0808C1D-F | 32Kx8 bit Low Power CMOS Static RAM K6T0808C1D Family
Document Title
32Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No History
0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 → 50µA KM62256DL-L ISB1 = 20 → 10µA KM62256DLI-L ISB1 = 50 → 15µA - CIN = 6 → 8pF, CIO = 8 → 10pF - KM622 Samsung semiconductor cmos | |
Esta página es del resultado de búsqueda del K6T1008C2E-B. Si pulsa el resultado de búsqueda de K6T1008C2E-B se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |