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K6R4008V1D даташитФункция этой детали – «512kx8 Bit High Speed StatIC Ram(3.3v Operating). Operated». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
K6R4008V1D | Samsung semiconductor |
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY K6R4008V1D
Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev No. Rev. 0.0 Rev. 0.1 Rev. 0.2 History Initial release with Preliminary. Add Low Ver. Change Icc, Isb and Isb1 Item ICC(Commercial) 8ns 10ns 12ns 15ns 8ns 10ns 12ns 15ns Previous 110mA 90mA 80mA 70mA 130mA 115mA 100mA 85mA 30mA 0.5mA Current 80mA 65mA 55mA 45mA 100mA 85mA 75mA 65mA 20mA 1.2mA Nov.23. 2001 Draft Data Aug. 20. 2001 Sep. 19. 2001 |
Это результат поиска, начинающийся с "6R4008V1D", "K6R4008" |
Номер в каталоге | Производители | Описание | |
K6R4008C1C | Samsung |
512K x 8bit High Speed Static CMOS SRAM PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
Revision History
RevNo. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. 1.1 Removed L |
|
K6R4008C1C-C | Samsung |
512K x 8bit High Speed Static CMOS SRAM PRELIMINARY
K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Preliminary.
Rev. 1.0
1.1 Rem |
|
K6R4008C1C-E | Samsung |
512K x 8bit High Speed Static CMOS SRAM PRELIMINARY
K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Preliminary.
Rev. 1.0
1.1 Rem |
|
K6R4008C1C-I | Samsung |
512K x 8bit High Speed Static CMOS SRAM PRELIMINARY
K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
Document Title
512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges.
Revision History
RevNo. History
Rev. 0.0 Initial release with Preliminary.
Rev. 1.0
1.1 Rem |
|
K6R4008C1D | Samsung semiconductor |
512K x8 Bit High Speed Static RAM K6R4008C1D
Document Title
512Kx8 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
Revision History
PRELIMINARY CMOS SRAM
RevNo. Rev. 0.0 Rev. 0.1
History Initial release with Preliminary. Change Icc. Isb and Isb1
Item
10ns
|
|
K6R4008V1B | Samsung semiconductor |
512K x8 Bit High Speed Static RAM
PRELIMINARY
CMOS SRAM
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev No. Rev. 0.0 Rev. 1.0 History Initial release with Desig |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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