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K6R1008C1A-I20 даташитФункция этой детали – «128kx8 High Speed StatIC Ram5v Operating/ Revolutionary Pin». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
K6R1008C1A-I20 | Samsung semiconductor |
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1.1. Delete Preliminary Update D.C parameters. 2.1. Update D.C parameters Previous spec. ITEMS (12/15/17/20ns part) ICC 200/190/180/170mA ISB 30mA ISB1 10mA Draft Data Apr. 22th, 1995 Feb. 29th, 1996 Remark Preliminary |
Это результат поиска, начинающийся с "6R1008C1A", "K6R1008C1A-" |
Номер в каталоге | Производители | Описание | |
K6R1008C1A- | Samsung semiconductor |
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Rel |
|
K6R1008C1A-C12 | Samsung semiconductor |
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Rel |
|
K6R1008C1A-C15 | Samsung semiconductor |
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Rel |
|
K6R1008C1A-C20 | Samsung semiconductor |
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Rel |
|
K6R1008C1A-I12 | Samsung semiconductor |
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Rel |
|
K6R1008C1A-I15 | Samsung semiconductor |
128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY
K6R1008C1A-C, K6R1008C1A-I
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM
Revision History
Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Rel |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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