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K6R1008C1A-I20 даташит

Функция этой детали – «128kx8 High Speed StatIC Ram5v Operating/ Revolutionary Pin».



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Номер в каталоге Производители Описание PDF
K6R1008C1A-I20 Samsung semiconductor
Samsung semiconductor
  128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Release to final Data Sheet. 1.1. Delete Preliminary Update D.C parameters. 2.1. Update D.C parameters Previous spec. ITEMS (12/15/17/20ns part) ICC 200/190/180/170mA ISB 30mA ISB1 10mA Draft Data Apr. 22th, 1995 Feb. 29th, 1996 Remark Preliminary
pdf

Это результат поиска, начинающийся с "6R1008C1A", "K6R1008C1A-"

Номер в каталоге Производители Описание PDF
K6R1008C1A- Samsung semiconductor
Samsung semiconductor

128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Rel
pdf
K6R1008C1A-C12 Samsung semiconductor
Samsung semiconductor

128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Rel
pdf
K6R1008C1A-C15 Samsung semiconductor
Samsung semiconductor

128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Rel
pdf
K6R1008C1A-C20 Samsung semiconductor
Samsung semiconductor

128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Rel
pdf
K6R1008C1A-I12 Samsung semiconductor
Samsung semiconductor

128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Rel
pdf
K6R1008C1A-I15 Samsung semiconductor
Samsung semiconductor

128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.

PRELIMINARY K6R1008C1A-C, K6R1008C1A-I Document Title 128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. CMOS SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial release with Preliminary. Rel
pdf

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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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