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K4B1G0846E даташитФункция этой детали – «1gb E-die Ddr3 Sdram». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
K4B1G0846E | Samsung |
1Gb E-die DDR3 SDRAM Rev. 1.4, Nov. 2009 K4B1G0446E K4B1G0846E K4B1G1646E
1Gb E-die DDR3 SDRAM
60FBGA & 84FBGA with Lead-Free & Halogen-Free (RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property o |
Это результат поиска, начинающийся с "4B1G0846E", "K4B1G08" |
Номер в каталоге | Производители | Описание | |
K4B1G0846C | Samsung semiconductor |
1Gb C-die DDR3 SDRAM Specification K4B1G04(08/16)46C
1Gb DDR3 SDRAM
1Gb C-die DDR3 SDRAM Specification
Revision 1.0
June 2007
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRA |
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K4B1G0846D | Samsung semiconductor |
1Gb D-die DDR3 SDRAM Specification K4B1G04(08/16)46D
1Gb DDR3 SDRAM
1Gb D-die DDR3 SDRAM Specification
82 / 100 FBGA with Lead-Free & Halogen-Free (RoHS Compliant)
CAUTION :
* This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC |
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K4B1G0846F | Samsung |
1Gb F-die DDR3 SDRAM Rev. 1.21, Nov. 2010 K4B1G0446F K4B1G0846F
1Gb F-die DDR3 SDRAM
78FBGA with Lead-Free & Halogen-Free (RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed here |
|
K4B1G0846G | Samsung |
1Gb G-die DDR3 SDRAM Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G
1Gb G-die DDR3 SDRAM
78FBGA with Lead-Free & Halogen-Free (RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herei |
|
K4B1G0846G-BCF8 | Samsung |
1Gb G-die DDR3 SDRAM Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G
1Gb G-die DDR3 SDRAM
78FBGA with Lead-Free & Halogen-Free (RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herei |
|
K4B1G0846G-BCH9 | Samsung |
1Gb G-die DDR3 SDRAM Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G
1Gb G-die DDR3 SDRAM
78FBGA with Lead-Free & Halogen-Free (RoHS compliant)
datasheet
SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
Products and specifications discussed herei |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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