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K4B1G0846E даташит

Функция этой детали – «1gb E-die Ddr3 Sdram».



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Номер в каталоге Производители Описание PDF
K4B1G0846E Samsung
Samsung
  1Gb E-die DDR3 SDRAM

Rev. 1.4, Nov. 2009 K4B1G0446E K4B1G0846E K4B1G1646E 1Gb E-die DDR3 SDRAM 60FBGA & 84FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property o
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Это результат поиска, начинающийся с "4B1G0846E", "K4B1G08"

Номер в каталоге Производители Описание PDF
K4B1G0846C Samsung semiconductor
Samsung semiconductor

1Gb C-die DDR3 SDRAM Specification

K4B1G04(08/16)46C 1Gb DDR3 SDRAM 1Gb C-die DDR3 SDRAM Specification Revision 1.0 June 2007 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRA
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K4B1G0846D Samsung semiconductor
Samsung semiconductor

1Gb D-die DDR3 SDRAM Specification

K4B1G04(08/16)46D 1Gb DDR3 SDRAM 1Gb D-die DDR3 SDRAM Specification 82 / 100 FBGA with Lead-Free & Halogen-Free (RoHS Compliant) CAUTION : * This document includes some items still under discussion in JEDEC. * Therefore, those may be changed without pre-notice based on JEDEC
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K4B1G0846F Samsung
Samsung

1Gb F-die DDR3 SDRAM

Rev. 1.21, Nov. 2010 K4B1G0446F K4B1G0846F 1Gb F-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed here
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K4B1G0846G Samsung
Samsung

1Gb G-die DDR3 SDRAM

Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herei
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K4B1G0846G-BCF8 Samsung
Samsung

1Gb G-die DDR3 SDRAM

Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herei
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K4B1G0846G-BCH9 Samsung
Samsung

1Gb G-die DDR3 SDRAM

Rev. 1.1, Aug. 2011 K4B1G0446G K4B1G0846G 1Gb G-die DDR3 SDRAM 78FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herei
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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