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K4A4G165WD даташитФункция этой детали – «4gb D-die Ddr4 Sdram». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
K4A4G165WD | Samsung |
4Gb D-die DDR4 SDRAM Rev. 0.5, Feb. 2014 K4A4G165WD
Preliminary
4Gb D-die DDR4 SDRAM x16 only
96FBGA with Lead-Free & Halogen-Free (RoHS compliant)
1.2V
CAUTION : This document includes some items still under discussion in JEDEC. Therefore, those may be changed without pre-notice based on JEDEC progress. In addition, it is highly recommended that you not send specs without Samsung’s permission.
datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
Products and specificati |
Это результат поиска, начинающийся с "4A4G165WD", "K4A4G16" |
Номер в каталоге | Производители | Описание | |
UPD44165082 | NEC |
(UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44165082, 44165182, 44165362
18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION
Description
The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the
µPD44165362 is a 524,288-word by 36-bit synchronou |
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UPD44165084 | NEC |
(UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44165084, 44165184, 44165364
18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION
Description
The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the
µPD44165364 is a 524,288-word by 36-bit synchronou |
|
UPD44165182 | NEC |
(UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44165082, 44165182, 44165362
18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION
Description
The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the
µPD44165362 is a 524,288-word by 36-bit synchronou |
|
UPD44165184 | NEC |
(UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44165084, 44165184, 44165364
18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION
Description
The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the
µPD44165364 is a 524,288-word by 36-bit synchronou |
|
UPD44165362 | NEC |
(UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44165082, 44165182, 44165362
18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION
Description
The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the
µPD44165362 is a 524,288-word by 36-bit synchronou |
|
UPD44165364 | NEC |
(UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION DATA SHEET
MOS INTEGRATED CIRCUIT
µPD44165084, 44165184, 44165364
18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION
Description
The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the
µPD44165364 is a 524,288-word by 36-bit synchronou |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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