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K4A4G165WD даташит

Функция этой детали – «4gb D-die Ddr4 Sdram».



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Номер в каталоге Производители Описание PDF
K4A4G165WD Samsung
Samsung
  4Gb D-die DDR4 SDRAM

Rev. 0.5, Feb. 2014 K4A4G165WD Preliminary 4Gb D-die DDR4 SDRAM x16 only 96FBGA with Lead-Free & Halogen-Free (RoHS compliant) 1.2V CAUTION : This document includes some items still under discussion in JEDEC. Therefore, those may be changed without pre-notice based on JEDEC progress. In addition, it is highly recommended that you not send specs without Samsung’s permission. datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specificati
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Номер в каталоге Производители Описание PDF
UPD44165082 NEC
NEC

(UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION

DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronou
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UPD44165084 NEC
NEC

(UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION

DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronou
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UPD44165182 NEC
NEC

(UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION

DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronou
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UPD44165184 NEC
NEC

(UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION

DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronou
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UPD44165362 NEC
NEC

(UPD44165082/182/362) 18M-BIT QDRII SRAM 2-WORD BURST OPERATION

DATA SHEET MOS INTEGRATED CIRCUIT µPD44165082, 44165182, 44165362 18M-BIT QDRTMII SRAM 2-WORD BURST OPERATION Description The µPD44165082 is a 2,097,152-word by 8-bit, the µPD44165182 is a 1,048,576-word by 18-bit and the µPD44165362 is a 524,288-word by 36-bit synchronou
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UPD44165364 NEC
NEC

(UPD44165084/184/364) 18M-BIT QDRII SRAM 4-WORD BURST OPERATION

DATA SHEET MOS INTEGRATED CIRCUIT µPD44165084, 44165184, 44165364 18M-BIT QDRTMII SRAM 4-WORD BURST OPERATION Description The µPD44165084 is a 2,097,152-word by 8-bit, the µPD44165184 is a 1,048,576-word by 18-bit and the µPD44165364 is a 524,288-word by 36-bit synchronou
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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