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K40T120 даташит ( Даташиты, Даташиты )

Номер в каталоге Описание Производители PDF
2 K40T120   IGBT

FDP52N20 / FDPF52N20T N-Channel MOSFET October 2007 UniFETTM FDP52N20 / FDPF52N20T N-Channel MOSFET 200V, 52A, 0.049Ω Features • RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A • Low gate charge ( Typ. 49nC) • Low Crss ( Typ. 66pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been
Infineon
Infineon
pdf
1 K40T1202   IGBT

TrenchStop 2 Generation Series ® nd IKW40N120T2 Low Loss DuoPack :            IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode C Best in class TO247 Short circuit withstand time – 10s Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® 2nd generation for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior Easy paralleling capability due to
Infineon
Infineon
pdf



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Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.

Fairchild Semiconductor
Fairchild Semiconductor
pdf
HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.

HYDIS
HYDIS
pdf

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свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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