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K3114 даташит ( Даташиты, Даташиты ) |
| Номер в каталоге | Описание | Производители | ||
| 1 | K3114 | 2SK3114 DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3114
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3114 PACKAGE Isolated TO-220
DESCRIPTION
The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V |
 NEC |
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K даташита ( переписка ) |
| Номер в каталоге | Описание | Производители | |
| K0339 | Indexing plungers |
 Kipp |
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| K0339_A | Indexing plungers |
Kipp |
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| K0339_B | Indexing plungers |
Kipp |
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| K0349LC600 | Medium Voltage Thyristor |
 IXYS |
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| K0349LC640 | Medium Voltage Thyristor |
IXYS |
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| K0349LC650 | Medium Voltage Thyristor |
IXYS |
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| K0443LC600 | Medium Voltage Thyristor |
IXYS |
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| K0443LC620 | Medium Voltage Thyristor |
IXYS |
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| K0443LC640 | Medium Voltage Thyristor |
IXYS |
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| K0443LC650 | Medium Voltage Thyristor |
IXYS |
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 Fairchild Semiconductor |
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 HYDIS |
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На первой странице data sheets приводятся: |
| DataSheet26.com | 2018 | Контакты |