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K3114 даташит ( Даташиты, Даташиты )

Номер Номер в каталоге Описание Производители PDF
1 K3114   2SK3114

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V
NEC
NEC
K3114 pdf Даташит



K даташита ( переписка )

Номер в каталоге Описание Производители PDF
K0339

Indexing plungers

Kipp
Kipp
pdf
K0339_A

Indexing plungers

Kipp
Kipp
pdf
K0339_B

Indexing plungers

Kipp
Kipp
pdf
K0349LC600

Medium Voltage Thyristor

IXYS
IXYS
pdf
K0349LC640

Medium Voltage Thyristor

IXYS
IXYS
pdf
K0349LC650

Medium Voltage Thyristor

IXYS
IXYS
pdf
K0443LC600

Medium Voltage Thyristor

IXYS
IXYS
pdf
K0443LC620

Medium Voltage Thyristor

IXYS
IXYS
pdf
K0443LC640

Medium Voltage Thyristor

IXYS
IXYS
pdf
K0443LC650

Medium Voltage Thyristor

IXYS
IXYS
pdf


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свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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