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K2956 даташитФункция этой детали – «PDF». |
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Номер в каталоге | Производители | Описание | |
K2900-01 | Fuji Electric |
N-channel MOS-FET > Features
- High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated
2SK2900-01
FAP-IIIB Series
N-channel MOS-FET
60V 14,5mΩ ±45A 60W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max |
|
K2902-01MR | Fuji Electric |
MOSFET ( Transistor ) - 2SK2902-01MR 2SK2902-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
2.54
3. Source
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Oper |
|
K2915 | Toshiba Semiconductor |
MOSFET ( Transistor ) - 2SK2915 2SK2915
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2915
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 0.31 Ω (typ.) : |Yfs| = 15 S (typ.) Unit: mm
z Low leakage current : IDSS = 100 μA (max) (VDS = 600 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain−source voltage Drain−gate voltage |
|
K2917 | Toshiba Semiconductor |
MOSFET ( Transistor ) - 2SK2917 2SK2917
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2917
Chopper Regulator, DC−DC Converter and Motor Drive Applications
z Low drain–source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0.21 Ω (typ.) : |Yfs| = 17 S (typ.) Unit: mm
: IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain–source voltage Drain–gate voltage (RGS = 20 kΩ) Ga |
|
K2926 | Hitachi Semiconductor |
MOSFET ( Transistor ) - 2SK2926 2SK2926(L), 2SK2926(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.042Ω typ.
• 4V gate drive devices. • High speed switching
Outline
DPAK–2
D
G
S
44
12 3
12 3
1. Gate 2. Drain 3. Source 4. Drain
ADE-208-535 1st. Edition
2SK2926(L), 2SK2926(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissip |
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K2929 | Hitachi Semiconductor |
MOSFET ( Transistor ) - 2SK2929 2SK2929
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-552C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange 3. Source
2SK2929
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipat |
|
K2930 | Hitachi Semiconductor |
MOSFET ( Transistor ) - 2SK2930 2SK2930
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-553C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G
1 2 S 3
1. Gate 2. Drain(Flange 3. Source
2SK2930
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipat |
|
K2936 | Renesas |
Silicon N Channel MOS FET 2SK2936
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS =0.010 Ω typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
REJ03G1050-0400 (Previous: ADE-208-559B)
Rev.4.00 Sep 07, 2005
RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM)
D
G
1. Gate 2. Drain 3. Source
12 3
S
Rev.4.00 Sep 07, 2005 page 1 of 7
2SK2936
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak curre |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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