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K2885 даташитФункция этой детали – «Mosfet ( Transistor ) - 2sk2885». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
K2885 | Hitachi Semiconductor |
MOSFET ( Transistor ) - 2SK2885 2SK2885(L), 2SK2885(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 10mΩ typ.
• 4V gate drive devices. • High speed switching
Outline
LDPAK
D
G
S
ADE-208-545 A 2nd. Edition
44
1 2 3
1 2 3
1. Gate 2. Drain 3. Source 4. Drain
2SK2885(L), 2SK2885(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage te |
Это результат поиска, начинающийся с "2885", "K2" |
Номер в каталоге | Производители | Описание | |
2SC2885 | NEC |
(2SC2885 / 2SC2946) Silicon Transistors DATA SHEET
SILICON TRANSISTORS
2SC2885, 2946, 2946(1)
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small package (MP-3) which is suitable for high-densi |
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2SK2885 | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK2885(L), 2SK2885(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-545 A 2nd. Edition Features
• Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching
Outline
LDPAK
4 4
D 1 1 G 2 3
2
3
1. Gate 2. Drain 3. Source 4. D |
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2SK2885L | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK2885(L), 2SK2885(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-545 A 2nd. Edition Features
• Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching
Outline
LDPAK
4 4
D 1 1 G 2 3
2
3
1. Gate 2. Drain 3. Source 4. D |
|
2SK2885S | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK2885(L), 2SK2885(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-545 A 2nd. Edition Features
• Low on-resistance R DS(on) = 10mΩ typ. • 4V gate drive devices. • High speed switching
Outline
LDPAK
4 4
D 1 1 G 2 3
2
3
1. Gate 2. Drain 3. Source 4. D |
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DS12885 | Maxim Integrated Products |
(DS12xxx) Real Time Clock Rev 0; 6/05
Real-Time Clock
General Description
The DS12885, DS12887, and DS12C887 real-time clocks (RTCs) are designed to be direct replacements for the DS1285 and DS1287. The devices provide a real-time clock/calendar, one time-of-day alarm, three maskable interrupts with a co |
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DS12885 | Dallas Semiconductor |
Real-Time Clock www.maxim-ic.com
DS12885/DS12885Q/DS12885T Real-Time Clock
PIN ASSIGNMENT (Top View)
DS12885, 24 DIP DS12885S, 24 SO 300mil
www.maxim-ic.com
FEATURES
Drop- in replacement for IBM AT computer clock/calendar § Pin configuration closely matches MC146818B and DS1285 Datasheet.esaSheet |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |