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K25T120 даташитФункция этой детали – «Ikw25t120». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
K25T120 | Infineon Technologies |
IKW25T120 TrenchStop Series
®
IKW25T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C
• • • •
• • • • • • •
Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, t |
Это результат поиска, начинающийся с "25T120", "K25T" |
Номер в каталоге | Производители | Описание | |
BT25T120ANF | Huajing Microelectronics |
Silicon FS Planar IGBT Silicon FS Planar IGBT
BT25T120ANF
○R
General Description:
Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness.
VCES IC Ptot (TC=25℃� |
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FGH25T120SMD | Fairchild Semiconductor |
IGBT FGH25T120SMD — 1200 V, 25 A Field Stop Trench IGBT
August 2014
FGH25T120SMD
1200 V, 25 A Field Stop Trench IGBT
Features
• FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 25 A • 100% of Th |
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G25T120 | Infineon |
Low Loss IGBT TrenchStop® Series
IGW25T120
Low Loss IGBT in TrenchStop® and Fieldstop technology
• Short circuit withstand time – 10µs • Designed for :
- Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applications offers : - ve |
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IGW25T120 | Infineon Technologies AG |
Low Loss IGBT TrenchStop® Series
IGW25T120
Low Loss IGBT in TrenchStop® and Fieldstop technology
• Short circuit withstand time – 10µs • Designed for :
- Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applications offers : - ve |
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IKW25T120 | Infineon Technologies |
IGBT TrenchStop® Series
IKW25T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D
Short circuit withstand time – |
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MBQ25T120FESC | MagnaChip |
IGBT MBQ25T120FESC 1200V Fieldstop Trench IGBT
MBQ25T120FESC
High speed Fieldstop Trench IGBT
General Description
This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality.
Th |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |