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K25T120 даташит

Функция этой детали – «Ikw25t120».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
K25T120 Infineon Technologies
Infineon Technologies
  IKW25T120

TrenchStop Series ® IKW25T120 Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D Short circuit withstand time – 10µs Designed for : - Frequency Converters - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, t
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Это результат поиска, начинающийся с "25T120", "K25T"

Номер в каталоге Производители Описание PDF
BT25T120ANF Huajing Microelectronics
Huajing Microelectronics

Silicon FS Planar IGBT

Silicon FS Planar IGBT BT25T120ANF ○R General Description: Using HUAJING's proprietary trench design and advanced FS(field stop) technology, the 1200V Trench FS-IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot (TC=25℃�
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FGH25T120SMD Fairchild Semiconductor
Fairchild Semiconductor

IGBT

FGH25T120SMD — 1200 V, 25 A Field Stop Trench IGBT August 2014 FGH25T120SMD 1200 V, 25 A Field Stop Trench IGBT Features • FS Trench Technology, Positive Temperature Coefficient • High Speed Switching • Low Saturation Voltage: VCE(sat) =1.8 V @ IC = 25 A • 100% of Th
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G25T120 Infineon
Infineon

Low Loss IGBT

TrenchStop® Series IGW25T120 Low Loss IGBT in TrenchStop® and Fieldstop technology • Short circuit withstand time – 10µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applications offers : - ve
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IGW25T120 Infineon Technologies AG
Infineon Technologies AG

Low Loss IGBT

TrenchStop® Series IGW25T120 Low Loss IGBT in TrenchStop® and Fieldstop technology • Short circuit withstand time – 10µs • Designed for : - Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Fieldstop technology for 1200 V applications offers : - ve
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IKW25T120 Infineon Technologies
Infineon Technologies

IGBT

TrenchStop® Series IKW25T120 Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C  Approx. 1.0V reduced VCE(sat) and 0.5V reduced VF compared to BUP314D  Short circuit withstand time –
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MBQ25T120FESC MagnaChip
MagnaChip

IGBT

MBQ25T120FESC 1200V Fieldstop Trench IGBT MBQ25T120FESC High speed Fieldstop Trench IGBT General Description This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality. Th
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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