DataSheet26.com


K2529 даташит

Функция этой детали – «PDF».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
K2500E70 Teccor
Teccor
  silicon bilateral voltage triggered switch

DO-15X Axial Lead DO-214AA Surface Mount TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected SIDAC (95 - 330 Volts) 9 General Description The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac switches on through a negative resistance region to a low on-state voltage. Conduction will continue until the current is interrupted or
pdf
K2500F1 Teccor
Teccor
  silicon bilateral voltage triggered switch

pdf
K2500G Teccor
Teccor
  silicon bilateral voltage triggered switch

pdf
K2500S Teccor
Teccor
  silicon bilateral voltage triggered switch

pdf
K2501GL Littelfuse
Littelfuse
  Standard Bidirectional SIDAC

Teccor® brand Thyristors Standard Bidirectional SIDACs Kxxx1GL Series RoHS Schematic Symbol Applications Typical application circuit presented in Figure 10 of this data sheet (Typical Metal Halide Ignitor Circuit). Description The Multipulse™ SIDAC is a voltage switch used in MetalHalide lamp ignition circuits, as well as High Pressure Sodium lamp ignition circuits for outdoor street and area lighting. This robust solid-state switch is designed to handle lamp igniter applications requiring operation at ambient t
pdf
K2503 ROHM Semiconductor
ROHM Semiconductor
  MOSFET ( Transistor ) - 2SK2503

Transistors Small switching (60V, 5A) 2SK2503 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dimensions (Units: mm) FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 122 Transistors FElectrical characteristics (Ta = 25_C) 2SK2503 FElectrical characteristic curves 123 Transistors 2SK2503 124 Transistors 2SK2503 FSwi
pdf
K2504 ROHM Semiconductor
ROHM Semiconductor
  MOSFET ( Transistor ) - 2SK2504

2SK2504 Transistors 4V Drive Nch MOS FET 2SK2504 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) CPT3 6.5 5.1 2.3 0.5 zFeatures 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy. 5.5 1.5 0.9 0.75 0.65 (1)Gate (2)Drain (3)Source 0.9 (1) 2.3 (2) (3) 2.3 0.8Min. 0.5 1.0 Abbreviated symbol : K2504 zApplications Switching zPackaging specifications Package Type Code Bas
pdf
K2507 Toshiba Semiconductor
Toshiba Semiconductor
  MOSFET ( Transistor ) - 2SK2507

2SK2507 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2507 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.034 Ω (typ.) l High forward transfer admittance : |Yfs| = 16 S (typ.) l Low leakage current : IDSS = 100 µA (max) (VDS = 50 V) l Enhancement−mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate volt
pdf

[1]   [2]   [3]   [4]   [5]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты