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K2529 даташитФункция этой детали – «PDF». |
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Номер в каталоге | Производители | Описание | |
K2500E70 | Teccor |
silicon bilateral voltage triggered switch DO-15X Axial Lead
DO-214AA Surface Mount
TO-202AB Type 1 TO-92 Type 70 Do not use mounting tab or center lead, electrically connected
SIDAC
(95 - 330 Volts)
9
General Description
The Sidac is a silicon bilateral voltage triggered switch with greater power-handling capabilities than standard diacs. Upon application of a voltage exceeding the Sidac breakover voltage point, the Sidac switches on through a negative resistance region to a low on-state voltage. Conduction will continue until the current is interrupted or |
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K2500F1 | Teccor |
silicon bilateral voltage triggered switch |
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K2500G | Teccor |
silicon bilateral voltage triggered switch |
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K2500S | Teccor |
silicon bilateral voltage triggered switch |
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K2501GL | Littelfuse |
Standard Bidirectional SIDAC Teccor® brand Thyristors
Standard Bidirectional SIDACs
Kxxx1GL Series
RoHS
Schematic Symbol
Applications Typical application circuit presented in Figure 10 of this data sheet (Typical Metal Halide Ignitor Circuit).
Description
The Multipulse™ SIDAC is a voltage switch used in MetalHalide lamp ignition circuits, as well as High Pressure Sodium lamp ignition circuits for outdoor street and area lighting. This robust solid-state switch is designed to handle lamp igniter applications requiring operation at ambient t |
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K2503 | ROHM Semiconductor |
MOSFET ( Transistor ) - 2SK2503 Transistors
Small switching (60V, 5A)
2SK2503
FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel.
FStructure Silicon N-channel MOSFET
FExternal dimensions (Units: mm)
FAbsolute maximum ratings (Ta = 25_C)
FPackaging specifications
122
Transistors
FElectrical characteristics (Ta = 25_C)
2SK2503
FElectrical characteristic curves
123
Transistors
2SK2503
124
Transistors
2SK2503
FSwi |
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K2504 | ROHM Semiconductor |
MOSFET ( Transistor ) - 2SK2504
2SK2504
Transistors
4V Drive Nch MOS FET
2SK2504
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
CPT3
6.5 5.1
2.3 0.5
zFeatures 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) 4V drive. 5) Drive circuits can be simple. 6) Parallel use is easy.
5.5
1.5
0.9
0.75 0.65
(1)Gate (2)Drain (3)Source
0.9
(1)
2.3
(2) (3)
2.3
0.8Min.
0.5 1.0
Abbreviated symbol : K2504
zApplications Switching zPackaging specifications
Package Type Code Bas |
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K2507 | Toshiba Semiconductor |
MOSFET ( Transistor ) - 2SK2507 2SK2507
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2507
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Unit: mm
l 4 V gate drive
l Low drain−source ON resistance : RDS (ON) = 0.034 Ω (typ.)
l High forward transfer admittance : |Yfs| = 16 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 50 V)
l Enhancement−mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate volt |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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